參數(shù)資料
型號： VNB14NV0413TR
廠商： 意法半導(dǎo)體
英文描述： “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
中文描述： “OMNIFET二”：充分AUTOPROTECTED功率MOSFET
文件頁數(shù)： 4/29頁
文件大?。?/td> 510K
代理商： VNB14NV0413TR
4/29
VNB14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04 / VNS14NV04
ELECTRICAL CHARACTERISTICS
(continued) (T
j
=25°C, unless otherwise specified)
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
PROTECTIONS (-40°C < T
j
< 150°C, unless otherwise specified)
Symbol
Parameter
I
lim
Drain Current Limit
Step Response Current
Limit
Overtemperature
Shutdown
T
jrs
Overtemperature Reset
I
gf
Fault Sink Current
(*) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
g
fs
(*)
Forward
Transconductance
Output Capacitance
V
DD
=13V; I
D
=7A
18
S
C
OSS
V
DS
=13V; f=1MHz; V
IN
=0V
400
pF
Symbol
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Parameter
Test Conditions
Min
Typ
80
350
450
150
1.5
9.7
9
10.2
Max
250
1000
1350
500
4.5
30.0
25.0
30.0
Unit
ns
ns
ns
ns
μ
s
μ
s
μ
s
μ
s
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
DD
=15V; I
D
=7A
V
gen
=5V; R
gen
=R
IN MIN
=10
(see figure 1)
V
DD
=15V; I
D
=7A
V
gen
=5V; R
gen
=2.2K
(see figure 1)
(di/dt)
on
Turn-on Current Slope
V
DD
=15V; I
D
=7A
V
gen
=5V; R
gen
=R
IN MIN
=10
V
DD
=12V; I
D
=7A; V
IN
=5V; I
gen
=2.13mA
(see figure 5)
16
A/
μ
s
Q
i
Total Input Charge
36.8
nC
Symbol
V
SD
(*)
t
rr
Q
rr
I
RRM
Parameter
Test Conditions
Min
Typ
0.8
300
0.8
5
Max
Unit
V
ns
μ
C
A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=7A; V
IN
=0V
I
SD
=7A; di/dt=40A/
μ
s
V
DD
=30V; L=200
μ
H
(see test circuit, figure 2)
Test Conditions
Min
12
Typ
18
Max
24
Unit
A
V
IN
=5V; V
DS
=13V
V
IN
=5V; V
DS
=13V
t
dlim
45
μ
s
T
jsh
150
175
200
°C
135
10
°C
mA
V
IN
=5V; V
DS
=13V; T
j
=T
jsh
starting T
j
=25°C; V
DD
=24V
V
IN
= 5V; R
gen
=R
IN MIN
=10
; L=24mH
(see figures 3 & 4)
15
20
E
as
Single Pulse
Avalanche Energy
400
mJ
2
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