參數(shù)資料
型號: VN920B5-E
廠商: 意法半導(dǎo)體
英文描述: HIGH SIDE DRIVER
中文描述: 高邊驅(qū)動器
文件頁數(shù): 9/24頁
文件大小: 388K
代理商: VN920B5-E
9/24
VN920-E / VN920B5-E / VN920SO-E
Figure 8. Application Schematic
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
GND
only). This
can be used with any type of load.
The following is an indication on how to dimension the
R
GND
resistor.
1) R
GND
600mV / (I
S(on)max
).
2) R
GND
≥ (
V
CC
) / (-I
GND
)
where -I
GND
is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse
battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
S(on)max
becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
GND
will
produce a shift (I
S(on)max
* R
GND
) in the input thresholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
PROTECTION
NETWORK
AGAINST
Solution 2: A diode (D
GND
) in the ground line.
A resistor (R
=1k
)
should be inserted in parallel to
D
GND
if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (
j
600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT line is also required to prevent
that, during battery voltage transient, the current exceeds
the Absolute Maximum Rating.
Safest configuration for unused INPUT pin is to leave it
unconnected, while unused SENSE pin has to be
connected to Ground pin.
LOAD DUMP PROTECTION
D
ld
is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds V
max DC rating.
The same applies if the device will be subject to
transients on the V
CC
line that are greater than the ones
shown in the ISO T/R 7637/1 table.
μ
C I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the V
CC
line, the control pins will
be pulled negative. ST suggests to insert a resistor (R
prot
)
in line to prevent the
μ
C I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of
μ
C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of
μ
C I/Os.
-V
CCpeak
/I
latchup
R
prot
(V
OH
μ
C
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= - 100V and I
latchup
20mA; V
OH
μ
C
4.5V
5k
R
prot
65k
.
Recommended R
prot
value is 10k
.
V
CC
GND
OUTPUT
D
GND
R
GND
D
ld
μ
C
+5V
R
prot
V
GND
INPUT
CURRENT SENSE
R
SENSE
R
prot
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VN920D-B5_04 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE DRIVER