參數(shù)資料
型號: VN50300L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 500-V (D-S) MOSFETs
中文描述: N溝道500 -五(副)的MOSFET
文件頁數(shù): 1/4頁
文件大小: 40K
代理商: VN50300L
VN50300L/VN50300T
Vishay Siliconix
Document Number: 70216
S-04279—Rev. D, 16-Jul-01
www.vishay.com
11-1
N-Channel 500-V (D-S) MOSFETs
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
VN50300L
300 @ V
GS
= 10 V
1 to 4.5
0.033
VN50300T
500
300 @ V
GS
= 10 V
1 to 4.5
0.022
Moderate On-Resistance: 240
Secondary Breakdown Free: 520 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors,etc.
Telephone Mute Switches, Ringer Circuits
Power Supply, Converters
Motor Control
VN50300T
Top View
TO-226AA
(TO-92)
S
D
G
1
2
3
G
TO-236
(SOT-23)
S
D
Top View
2
3
1
VN50300L
Device Marking
Front View
“S” VN5
0300L
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
V1 = Part Number Code for VN50300T
w
= Week Code
ll
= Lot Traceability
Device Marking
Top View
V1
wll
Parameter
Symbol
VN50300L
VN50300T
Unit
Drain-Source Voltage
V
DS
500
500
Gate-Source Voltage
V
GS
30
30
V
T
A
= 25 C
0.033
0.022
Continuous Drain Current
(T
J
= 150 C)
T
A
= 100 C
I
D
0.021
0.013
A
Pulsed Drain Current
a
I
DM
0.013
0.08
T
A
= 25 C
0.8
0.35
Power Dissipation
T
A
= 100 C
P
D
0.32
0.14
W
Thermal Resistance, Junction-to-Ambient
R
thJA
156
350
C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
C
Notes
a.
Pulse width limited by maximum junction temperature.
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