參數(shù)資料
型號(hào)： VN3205N3
廠商： SUPERTEX INC
元件分類： 小信號(hào)晶體管
英文描述： N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述： 1200 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 459K
代理商： VN3205N3
2
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Drain-to-Source Breakdown Voltage
50
V
V
GS
= 0V, I
D
= 10mA
V
GS
= V
DS
, I
D
= 10mA
V
GS
= V
DS
, I
D
= 10mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 10V, V
DS
= 5V
V
GS
= 4.5V, I
D
= 1.5A
V
GS
= 4.5V, I
D
= 0.75A
V
GS
= 10V, I
D
= 3A
V
GS
= 10V, I
D
= 1.5A
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 2A
Gate Threshold Voltage
0.8
2.4
V
Change in V
GS(th)
with Temperature
Gate Body Leakage
-4.3
-5.5
mV/
°
C
1
100
nA
Zero Gate Voltage Drain Current
10
μ
A
1
mA
I
D(ON)
R
DS(ON)
ON-State Drain Current
3.0
14
A
TO-92 and P-DIP
0.45
SOT-89
0.45
TO-92 and P-DIP
0.3
SOT-89
0.3
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.85
1.2
%/
°
C
1.0
1.5
Input Capacitance
220
300
Common Source Output Capacitance
70
120
pF
Reverse Transfer Capacitance
20
30
Turn-ON Delay Time
10
Rise Time
15
Turn-OFF Delay Time
25
Fall Time
25
Diode Forward Voltage Drop
1.6
V
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1A
Reverse Recovery Time
300
ns
Notes
:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-92
1.2A
8.0A
125
170
1.2A
8.0A
SOT-89
1.5A
8.0A
1.6W (T
A
= 25
°
C)
3.0W
15
78
1.5A
8.0A
Plastic DIP
1.5A
8.0A
41.6
83.3
1.5A
8.0A
*
I
(continuous) is limited by max rated T
. T
= 25
°
C.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Total for package.
VN3205
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
ns
Thermal Characteristics
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
V
DD
= 25V
I
D
= 2A
R
GEN
= 10
Static Drain-to-Source
ON-State Resistance
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VN3205N3-G 功能描述:MOSFET 50V 0.3Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN3205N3-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN3205N3-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN3205N3-G P005 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN3205N3-G P013 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
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