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參數(shù)資料
| 型號： | VN2460 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓600V,20Ω，N溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS（擊穿電壓的600V，20Ω，?溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 32K |
| 代理商： | VN2460 |
2
VN2460
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.6W
1W
θ
jc
°
C/W
15
125
θ
ja
°
C/W
78
170
I
DR
*
I
DRM
TO-243AA
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
0.2A
0.16A
0.6A
0.5A
0.2A
0.16A
0.6A
0.5A
Thermal Characteristics
Symbol
BV
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Min
Typ
Max
Unit
Conditions
600
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
1.5
V
V
GS
= V
DS
, I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 2.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
-5.5
100
10
mV/
°
C
nA
μ
A
mA
1
I
D(ON)
ON-State Drain Current
0.25
A
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
25
20
1.7
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 10V, I
D
= 100mA
V
GS
= 10V, I
D
= 100mA
V
DS
= 25V, I
D
= 100mA
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
%/
°
C
m
50
150
50
25
10
10
25
20
1.5
pF
V
V
GS
= 0V, I
SD
= 400mA
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
V
GS
= 0V, I
D
= 2.0mA
ns
V
GS
= 0V, V
DS
= 25V
f = 1.0 MHz
V
DD
= 25V,
I
D
= 250mA,
R
GEN
= 25
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
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