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參數(shù)資料
| 型號： | VN2450N8 |
| 廠商： | SUPERTEX INC |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 0.25 A, 500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA |
| 封裝： | SAME AS SOT-89, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 457K |
| 代理商： | VN2450N8 |
2
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.6W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-243AA
0.25A
0.75A
15
78
0.25A
0.75A
TO-92
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
0.2A
0.65A
1W
125
170
0.2A
0.65A
Thermal Characteristics
Symbol
Parameter
Drain-to-Source
Breakdown Voltage
Min
Typ
Max
Unit
Conditions
BV
DSS
500
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
1.5
V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
Change in V
GS(th)
with Temperature
Gate Body Leakage
-5.5
mV/
°
C
nA
100
Zero Gate Voltage Drain Current
10
μ
A
mA
1
I
D(ON)
ON-State Drain Current
0.5
A
V
GS
= 10V, V
DS
= 25V
R
DS(ON)
20
V
GS
= 4.5V, I
D
= 100mA
V
GS
= 10V, I
D
= 400mA
V
GS
= 10V, I
D
= 400mA
V
DS
= 25V, I
D
= 200mA
13
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.7
%/
°
C
50
m
Input Capacitance
150
Common Source Output Capacitance
50
pF
Reverse Transfer Capacitance
25
Turn-ON Delay Time
10
Rise Time
10
Turn-OFF Delay Time
25
Fall Time
20
Diode Forward Voltage Drop
1.5
V
V
GS
= 0V, I
SD
= 400mA
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Static Drain-to-Source
ON-State Resistance
V
V
GS
= 0V, I
D
= 2.0mA
ns
V
GS
= 0V, V
DS
= 25V
f = 1.0 MHz
V
DD
= 25V,
I
D
= 250mA,
R
GEN
= 25
Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
VN2450
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN2450N8-G | 功能描述:MOSFET 500V 13Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2450NW | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN2460 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN2460N3 | 功能描述:MOSFET 600V 20Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2460N3-G | 功能描述:MOSFET 600V 20Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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