參數(shù)資料
型號(hào): VN2410L
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: Small Signal MOSFET 240 V, 200 mA(240V, 200mA, 小信號(hào)MOSFET)
中文描述: 200 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: CASE 29-11, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 83K
代理商: VN2410L
VN2410L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
STATIC CHARACTERISTICS
Drain
Source Breakdown Voltage
(V
GS
= 0, I
D
= 100
μ
A)
V
(BR)DSS
240
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 120 Vdc, V
GS
= 0)
(V
DS
= 120 Vdc, V
GS
= 0, T
A
= 125
°
C)
I
DSS
10
500
μ
Adc
Gate
Body Leakage
(V
DS
= 0, V
GS
=
±
15 V)
I
GSS
±
100
nAdc
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mA)
V
GS(th)
0.8
2.0
Vdc
On
State Drain Current (Note 1)
(V
GS
= 10 V, V
DS
2.0 V
DS(on)
)
I
D(on)
1.0
Adc
Drain
Source On Resistance (Note 1)
(V
GS
= 2.5 V, I
D
= 0.1 A)
(V
GS
= 10 V, I
D
= 0.5 A)
r
DS(on)
10
10
Forward Transconductance (Note 1)
(V
DS
= 10 V, I
D
= 0.5 A)
g
fs
300
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
125
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0,
f = 1.0 MHz)
C
oss
50
pF
Reverse Transfer Capacitance
C
rss
20
pF
SWITCHING CHARACTERISTICS
Turn
On Time
t
(on)
8.0
ns
(V
DD
= 60 Vdc, I
D
= 0.4 A,
R
L
= 150
, R
G
= 25
)
t
(r)
8.0
ns
Turn
Off Time
t
(off)
23
ns
t
(f)
34
ns
1. Pulse Test; Pulse Width < 300
μ
s, Duty Cycle
2.0%.
ORDERING INFORMATION
Device
Package
Shipping
VN2410L
TO
92
1000 Units / Box
VN2410LG
TO
92
(Pb
Free)
1000 Units / Box
VN2410LZL1
TO
92
2000 Ammo Pack
VN2410LZL1G
TO
92
(Pb
Free)
2000 Ammo Pack
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