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參數(shù)資料
| 型號： | VN2406M |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 330MA I(D) | TO-237 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 240伏五（巴西）直| 330MA（?。﹟至237 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 35K |
| 代理商： | VN2406M |
VN2406L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
STATIC CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100
μ
A)
V(BR)DSS
240
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 120 Vdc, VGS = 0)
(VDS = 120 Vdc, VGS = 0, TA = 125
°
C)
IDSS
–
–
10
500
μ
Adc
Gate– Body Leakage
(VDS = 0, VGS =
±
15 V)
IGSS
–
±
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
VGS(th)
0.8
2.0
Vdc
On–State Drain Current (Note 1)
(VGS = 10 V, VDS
≥
2.0 VDS(on))
ID(on)
1.0
–
Adc
Drain–Source On Resistance (Note 1)
(VGS = 2.5 V, ID = 0.1 A)
(VGS = 10 V, ID = 0.5 A)
rDS(on)
–
–
10
6.0
Forward Transconductance (Note 1)
(VDS = 10 V, ID = 0.5 A)
DYNAMIC CHARACTERISTICS
gfs
300
–
mS
Input Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
–
125
pF
Output Capacitance
–
50
pF
Reverse Transfer Capacitance
–
20
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VDD = 60 Vdc, ID = 0.4 A,
RL = 150
, RG = 25
)
0 4 A
t(on)
t(r)
t(off)
t(f)
–
8.0
ns
–
8.0
ns
Turn–Off Time
–
23
ns
–
34
ns
1. Pulse Test; Pulse Width < 300
μ
s, Duty Cycle
2.0%.
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| VN2410L | 功能描述:MOSFET 240V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2410L/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 240 Volts |
| VN2410LG | 功能描述:MOSFET 240V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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