參數(shù)資料
型號： VN2406
廠商： Supertex, Inc.
英文描述： N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述： N溝道增強型場效應(yīng)管垂直的DMOS
文件頁數(shù)： 2/2頁
文件大小： 442K
代理商： VN2406
2
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 FAX: (408) 222-4895
www.supertex.com
11/12/01
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Thermal Characteristics
Package
I
D
(continuous)*
VN2406/VN2410
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
240
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.8
2
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 120V
V
GS
= 0V, V
DS
= 120V
T
A
= 125
°
C
V
GS
= -10V, V
DS
= 15V
V
GS
= 2.5V, I
D
= 0.1A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, I
D
= 0.55A
V
DS
= 10V, I
D
= 0.5A
Gate Body Leakage
100
nA
Zero Gate Voltage Drain Current
10
500
μ
A
I
D(ON)
R
DS(ON)
ON-State Drain Current
1.0
A
All
10
VN2410
10
VN2406
6
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
Change in R
DS(ON)
with Temperature
Forward Transconductance
1.0
1.4
%/
°
C
300
m
Input Capacitance
125
Common Source Output Capacitance
50
pF
Reverse Transfer Capacitance
20
Turn-ON Delay Time
8
Rise Time
8
Turn-OFF Delay Time
23
Fall Time
24
Diode Forward Voltage Drop
VN2410
1.2
V
V
GS
= 0V, I
SD
= 0.19A
V
GS
= 0V, I
SD
= 0.8A
VN2406
1.2
V
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
V
V
GS
= 0V, I
D
= 0.1mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
DD
= 60V
I
D
= 0.4A
R
GEN
= 25
ns
Switching Waveforms and Test Circuit
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-92
0.9A
5.0A
125
170
0.18A
1.7A
*
I
D
(continuous) is limited by max rated T
j
.
相關(guān)PDF資料
PDF描述
VN2406L N-Channel Enhancement-Mode Vertical DMOS FETs
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VN2450 N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓500V,13Ω，N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管)
VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VN2406B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 630MA I(D) | TO-39
VN2406D 功能描述:MOSFET 240V 1.12A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN2406L 功能描述:MOSFET 240V 6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
VN2406L/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal MOSFET 200 mAmps， 240 Volts
VN2406L/ROTS 制造商:Vishay Siliconix 功能描述:MIL FLOW -55 C TO +125 COPERATING TEMPERATURE - Tape and Reel
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