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參數(shù)資料
| 型號： | VN2210 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓100V,N溝道增強型垂直DMOS結(jié)構(gòu)場效應(yīng)管) |
| 中文描述： | N溝道增強型場效應(yīng)管垂直的DMOS（擊穿電壓100V的，?溝道增強型垂直的DMOS結(jié)構(gòu)場效應(yīng)管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 27K |
| 代理商： | VN2210 |
7-199
7
TO-39
TO-92
BV
DSS
/
BV
DGS
100V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-39
TO-92
Die
0.35
8A
VN2210N2
VN2210N3
VN2210ND
MIL visual screening available
VN2210
Ordering Information
Order Number / Package
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
Excellent thermal stability
I
I
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
I
I
Complementary N- and P-channel devices
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
* Distance of 1.6 mm from case for 10 seconds.
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Note: See Package Outline section for dimensions.
S G D
D G S
Case: DRAIN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VN2210 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN2210N2 | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN2210N3 | INDUCTOR, 1812 CASE, 1000UH; Inductor type:Wirewound; Inductance:1000uH; Tolerance, inductance:+/-10%; Resistance:30R; Current, DC max:70mA; Frequency, resonant:2.3MHz; Case style:1812; Q factor:20; Material, core:Ferrite; Tolerance, RoHS Compliant: Yes |
| VN2210ND | N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN2218CC | Voltage-Feedback Operational Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN2210N2 | 功能描述:MOSFET 100V 0.35Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2210N3 | 功能描述:MOSFET 100V 0.35Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2210N3 P003 | 制造商:Supertex Inc 功能描述:Trans MOSFET N-CH 100V 1.2A 3-Pin TO-92 T/R |
| VN2210N3-G | 功能描述:MOSFET 100V 0.35Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VN2210N3-G P002 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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