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參數(shù)資料
| 型號(hào)： | VN20AN |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH SIDE SMART POWER SOLID STATE RELAY |
| 中文描述： | 高邊智能電源固態(tài)繼電器 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 189K |
| 代理商： | VN20AN |
FUNCTIONAL DESCRIPTION
The
device
has
indicates over temperature conditions.
The truth table shows input, diagnostic output
status
and
output
voltage
operation and fault conditions. The output signals
are processed by internal logic.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature
of 140
temperature returns to 125
automatically turned on again. To ensure the
protection in all V
CC
conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 28V accordinf to:
V
ds
= V
CC
- I
OV
* (R
i
+ R
w
+ R
l
)
where:
R
i
= internal resistence of Power Supply
R
w
= Wires resistance
R
l
= Short Circuit resistance
Driving inductive loads, an internal function of the
device ensures the fast demagnetization with
typical voltage (V
demag
) of -18V.
This function allows the reduction of the power
dissipation according to the formula:
P
dem
= 0.5 * L
load
* (I
load
)
2
* [(V
CC
+ V
dem
)/V
dem
] * f
a
diagnistic
output which
level
in
normal
o
C.
When the
o
C the switch is
where f = Switcning Frequency
Based on this formula it is possible to know the
value of inductance and/or current to avoid a
thermal shut-down.
PROTECTING THE DEVICE AGAINST REVER-
SE BATTERY
The simpliest way to protect the device against a
continuous reverse battery voltage (-36V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(Fig. 3). The consequences of the voltage drop
across this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -V
f
is seen by the device. (V
il
, V
ih
thresholds and Vstat are increased by V
f
with
respect to power GND).
The undervoltage shut-down level is increased by
V
f
.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V
ih
, V
il
and V
stat
. This
solution allows the use of a standard diode.
Over Current Test Circuit
VN20AN
5/11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN20AN011Y | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN20AN012Y | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN20ANSP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Peripheral Driver |
| VN20N | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN20N(011Y) | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH SIDE SMART POWER SOLID STATE RELAY |
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