- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359400 > VN16BSP (意法半導(dǎo)體) ISO HIGH SIDE SMART POWER SOLID STATE RELAY PDF資料下載
參數(shù)資料
| 型號： | VN16BSP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| 中文描述： | 標準高邊智能電源固態(tài)繼電器 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 80K |
| 代理商： | VN16BSP |
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load in on-state, open load in
off-state,
over
temperature
stuck-on to V
CC
.
From the falling edge of the input signal, the
status output, initially low
condition
(overtemperature
on-state), will go back to a high state with a
different delay in case of overtemperature(tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140
o
C. When this temperature returns to 125
o
C
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor being located inside the Power
MOS area. An internal function of the devices
ensures the fast demagnetization of inductive
loads with a typicalvoltage (V
demag
) of -18V. This
function allows to greatly reduces the power
dissipationaccording to the formula:
P
dem
= 0.5
L
load
(Ι
load
)
2
[(V
CC
+V
demag
)/V
demag
]
f
where f = switching frequencyand
V
demag
= demagnetizationvoltage.
The maximum inductance which causes the chip
conditions
and
to signal a fault
or
open
load
temperature to reach the shut-down temperature
in a specifiedthermal environment is a function of
the load current for a fixed V
CC
, V
demag
and f
according to the above formula. In this device if
the GND pin is disconnected, with V
CC
not
exceeding 16V, it willswitch off.
PROTECTING
REVERSE
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND)and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode areas follows:
If the input is pulled to power GND, a negative
voltage of -V
f
is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respectto power GND).
The undervoltageshutdown level is increa-
byVf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
referencepotential of the control unit to node [1]
(see application circuit in fig. 3), which becomes
the common signal GND for the whole control
board avoiding shift of V
ih
, V
il
and V
stat
. This
solutionallows the use of a standarddiode.
THE
DEVICE
AGAINST
BATTERY
sed
Switching Time Waveforms
VN16BSP
5/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VN1706B | TRANSISTOR | MOSFET | N-CHANNEL | 170V V(BR)DSS | 630MA I(D) | TO-39 |
| VN1706D | TRANSISTOR | MOSFET | N-CHANNEL | 170V V(BR)DSS | 700MA I(D) | TO-220AB |
| VN1706L | TRANSISTOR | MOSFET | N-CHANNEL | 170V V(BR)DSS | 220MA I(D) | TO-92 |
| VN1706M | TRANSISTOR | MOSFET | N-CHANNEL | 170V V(BR)DSS | 330MA I(D) | TO-237 |
| VN1710M | TRANSISTOR | MOSFET | N-CHANNEL | 170V V(BR)DSS | 250MA I(D) | TO-237 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VN16BSP | 制造商:STMicroelectronics 功能描述:MOSFET SMART SWITCH SO-10 |
| VN16BSP_04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN16BSP13TR | 功能描述:電源開關(guān) IC - 配電 High Side for SSR RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VN16BSP-E | 功能描述:功率驅(qū)動器IC HIGH SIDE FOR SSR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VN16BSPTR-E | 功能描述:功率驅(qū)動器IC HIGH SIDE FOR SSR RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。