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參數(shù)資料
| 型號： | VN0645N2 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 400 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 30K |
| 代理商： | VN0645N2 |
7-175
7
VN0645
VN0650
Order Number / Package
BV
DSS
/
BV
DGS
450V
R
DS(ON)
(max)
I
D(ON)
(min)
TO-39
TO-92
Die
16
16
0.5A
VN0645N2
—
—
500V
0.5A
—
VN0650N3
VN0650ND
MIL visual screening available
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Advanced DMOS Technology
The VN0650 is NOT recommended for new designs. Please
use VN2450 instead.
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
N-Channel Enhancement-Mode
Vertical DMOS FETs
TO-92
Features
I
I
Free from secondary breakdown
I
I
Low power drive requirement
I
I
Ease of paralleling
I
I
Low C
ISS
and fast switching speeds
Excellent thermal stability
I
I
I
I
Integral Source-Drain diode
I
I
High input impedance and high gain
I
I
Complementary N- and P-channel devices
Applications
I
I
Motor controls
I
I
Converters
I
I
Amplifiers
I
I
Switches
I
I
Power supply circuits
I
I
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
300
°
C
TO-39
Ordering Information
S G D
D G S
Case: DRAIN
相關PDF資料 |
PDF描述 |
|---|---|
| VN06SP13TR | ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN06SP | ISO High Side Smart Power Solid State Relay(ISO 高邊智能化功率固態(tài)繼電器) |
| VN06 | ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
| VN0808L | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓80V，夾斷電流0.3A的N溝道增強型MOSFET) |
| VN0808L | N-Channel 80- and 90-V (D-S) MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| VN0650 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN0650N3 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN0650ND | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| VN0660N3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 150MA I(D) | TO-92 |
| VN0660N5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 660V V(BR)DSS | 750MA I(D) | TO-220AB |
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