參數(shù)資料
型號(hào)： VN0605T
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V，最小夾斷電流0.18A的N溝道增強(qiáng)型MOSFET)
中文描述： N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓60V的，最小夾斷電流0.18A的N溝道增強(qiáng)型MOSFET的）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 73K
代理商： VN0605T
VN10LLS, VN0605T, VN0610LL, VN2222LL
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
11-2
Document Number: 70212
S-00528—Rev. F, 03-Mar-00
Limits
VN10LLS
VN0610LL
VN0605T
VN2222LL
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
V lt
V
(BR)DSS
V
GS
= 0 V, I
D
= 100 A
70
60
60
V
V
GS
= 0 V, I
D
= 10 A
70
60
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
2.1
0.8
2.5
0.8
3.0
0.6
2.5
Gate-Body Leakage
B d L
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
100
T
J
=125 C
500
nA
V
DS
= 0 V, V
GS
=
30 V
100
Zero G
D i C
Drain Current
V l
I
DSS
V
DS
= 50 V, V
GS
= 0 V
10
1.0
A
T
J
= 125 C
500
500
g
V
DS
= 48 V, V
GS
= 0 V
10
T
J
= 125 C
500
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
1000
750
500
750
mA
D i S
Drain-Source
O R
On-Resistance
V
GS
= 4.5 V, I
D
= 50 mA
4.5
7.5
i t
b
r
DS(on)
V
GS
= 5 V, I
D
= 0.2 A
4.5
7.5
7.5
V
GS
= 10 V, I
D
= 0.5 A
2.4
5
5
7.5
T
J
= 125 C
4.4
9
10
13.5
Forward
Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
230
100
100
mS
V
DS
= 10 V, I
D
= 0.2 A
180
80
Common Source
Output Conductance
b
g
os
V
DS
= 5 V, I
D
= 50 mA
500
s
Dynamic
Input Capacitance
C
iss
V
DS
=25 V, V
= 0 V
f = 1 MHz
25 V V
22
60
60
60
Output Capacitance
C
oss
11
25
25
25
pF
Reverse Transfer
Capacitance
C
rss
2
5
5
5
Switching
c
Turn-On Time
t
ON
V
= 15 V,
= 23 , I
10 V R
V
GEN
= 10 V, R
G
= 25
0.6 A
7
10
10
Turn-Off Time
t
OFF
DD
,
7
10
10
ns
Turn-On Time
t
ON
V
= 30 V,
= 150 , I
10 V R
V
GEN
= 10 V, R
G
= 25
0.2 A
7
20
Turn-Off Time
t
OFF
DD
,
11
20
Notes
a.
b.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
Switching time is essentially independent of operating temperature.
VNBF06
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VN0605T-E3 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 0.18A 3-Pin TO-236
VN0605T-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 0.18A 3-Pin TO-236 T/R
VN0605T-T1-E3 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 0.18A 3-Pin TO-236 T/R
VN0606 制造商:SUPERTEX 制造商全稱(chēng):SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs
VN0606L 功能描述:MOSFET 60V 0.33A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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