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參數(shù)資料
| 型號(hào)： | VN0104 |
| 廠商： | Supertex, Inc. |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FET |
| 中文描述： | N溝道增強(qiáng)型場效應(yīng)管垂直的DMOS |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 476K |
| 代理商： | VN0104 |
2
VN0104/VN0106
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1.0W
θ
jc
°
C/W
θ
ja
°
C/W
I
DR
*
I
DRM
TO-92
350mA
2.0A
125
170
350mA
2.0A
* I
D
(continuous) is limited by max rated T
j
.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
VN0106
60
VN0104
40
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
0.8
2.4
V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= 5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 250mA
V
GS
= 10V, I
D
= 1A
V
GS
= 10V, I
D
= 1A
V
DS
= 25V, I
D
= 0.5A
Change in V
GS(th)
with Temperature
Gate Body Leakage
-3.8
-5.5
mV/
°
C
nA
100
Zero Gate Voltage Drain Current
1
100
μ
A
I
D(ON)
ON-State Drain Current
0.5
1.0
2.0
2.5
R
DS(ON)
3.0
5.0
2.5
3.0
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.70
1
%/
°
C
m
300
450
Input Capacitance
55
65
Common Source Output Capacitance
20
25
pF
Reverse Transfer Capacitance
5
8
Turn-ON Delay Time
3
5
Rise Time
5
8
Turn-OFF Delay Time
6
9
Fall Time
5
8
Diode Forward Voltage Drop
1.2
1.8
V
V
GS
= 0V, I
SD
=1.0A
V
GS
= 0V, I
SD
=1.0A
Reverse Recovery Time
400
ns
A
Static Drain-to-Source
ON-State Resistance
V
V
GS
= 0V, I
D
= 1mA
Drain-to-Source
Breakdown Voltage
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
V
DD
= 25V
I
D
= 1A
R
GEN
= 25
ns
V
GS
= 0V, V
DS
= 25V
f = 1 MHz
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