參數(shù)資料
型號： VMK90-02T2
廠商： IXYS CORP
元件分類： JFETs
英文描述： Dual Power MOSFET Module
中文描述： 84 A, 200 V, 0.025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
封裝： TO-240AA, 7 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 128K
代理商： VMK90-02T2
2 - 4
VMK 90-02T2
Dimensions in mm (1 mm = 0.0394")
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
pulsed
60
S
C
iss
C
oss
C
rss
9000 15000
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1600
4500
pF
600
1500
pF
t
d(on)
t
r
t
d(off)
t
f
70
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1 (External), resistive load
80
ns
200
ns
100
ns
Q
g
Q
gs
Q
gd
380
450
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
70
110
nC
190
230
nC
R
thJC
R
thJK
0.33 K/W
with heat transfer paste
0.53 K/W
d
S
d
A
a
Creepage distance on surface
12.7
mm
Strike distance through air
9.6
mm
Max. allowable acceleration
50
m/s
2
Source-Drain Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
83
A
I
SM
Repetitive; pulse width limited by T
JM
330
A
V
SD
I
= I
; V
= 0 V,
Pulse test, t 300 s, duty cycle d 2 %
1.0
1.2
V
t
rr
I
F
= I
S
, -di/dt = 100 A/ s, V
DS
= 100 V, V
GS
= 0 V
400
750
ns
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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