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參數(shù)資料
| 型號(hào)： | VMIL100 |
| 英文描述： | TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 20A I(C) | SOT-160VAR |
| 中文描述： | 晶體管|晶體管|叩| 65V的五（巴西）總裁|甲一（c）|的SOT - 160VAR |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | VMIL100 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
VMIL 100
100 Watts, 28 Volts, Class AB
Defcom 100 - 200
MHz
GENERAL DESCRIPTION
The VMIL100 is an input matched COMMON EMITTER broadband
transistor specifically intended for use in the 100-200 MHz frequency band. It
may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure ruggedness and high reliability.
CASE OUTLINE
55HV, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 270 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage 65 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 20 A
Maximum Temperatures
Storage Temperature - 65 to +150 C
Operating Junction Temperature +150 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 175 MHz
Vcc = 28 Volts
Po=100W, F=175 MHz
100
7.0
14
8.5
60
20
30:1
Watts
Watts
dB
%
BVebo
BVces
BVceo
Cob
h
FE
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 100 mA
Ie = 50 mA
Vcb = 28 V, F = 1 MHz
Vce = 5 V, Ic = 1 A
4.0
65
33
10
220
.65
Volts
Volts
Volts
pF
C/W
o
Issue August 1996
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