參數(shù)資料
型號: VLMW711U2U3XV-GS08
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Visible LED, SINGLE COLOR LED, WHITE, 3.3 mm, 6 X 6 MM, 1.50 MM HEIGHT, ROHS COMPLIANT, SMD, 2 PIN
中文描述: LED High Power (> 0.5 Watts) 1W White Little Star 29700mcd @ 350mA
文件頁數(shù): 1/8頁
文件大?。?/td> 201K
代理商: VLMW711U2U3XV-GS08
Vishay Semiconductors
VLMW711U2U3XV
Document Number 83229
Rev. 1.0, 24-Feb-09
www.vishay.com
1
For technical support, please contact: LED@vishay.com
Little Star
1 W Power SMD LED White
DESCRIPTION
The VLMW711. is one of the most robust and light
efficient LEDs in the market. With its extremely high
level of brightness and the ultra low high profile, which
is only 1.5 mm are highly suitable for both conventional
lighting
and
specialized
automotive signal lights, traffic lights, channel lights,
tube lights and garden lights among others.
application
such
as
PRODUCT GROUP AND PACKAGE DATA
Product group: LED
Package: SMD Little Star
Product series: power
Angle of half intensity: ± 60°
FEATURES
Super high brightness surface mount LED
High flux output; typical 90 lm
120° viewing angle
Compact package outline
(L x W x H) of 6.0 x 6.0 x 1.5 mm
Ultra low height profile - 1.5 mm
Designed for high current drive; up to 350 mA
Low thermal resistance; R
thJP
= 10 K/W
Qualified according to JEDEC moisture sensitivity
level 2a
Compatible to IR reflow soldering
Little Star
are class 1M LED products. Do not view
directly with optical instrument
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Automotive qualified AEC-Q101
ESD-withstand voltage: up to 2 kV according to
JESD22-A114-B
APPLICATIONS
Automotive: exterior applications, e.g.: fog-lamp,
rear mirror lighting, etc.
Communication: flashLED
Industry: white goods (e.g.: oven, microwave, etc.)
Lighting: garden light, architecture lighting, general
lighting, etc.
207
8
4
PARTS TABLE
PART
LUMINOUS FLUX
CORRELATION BETWEEN
LUM. FLUX/LUM. INTENSITY
(at I
F
= 350 mA)
White,
φ
= (87 400 to 113 600) mlm
COLOR, LUMINOUS
INTENSITY
(at I
F
= 350 mA)
TECHNOLOGY
VLMW711U2U3XV-GS08
I
V typ.
= 29 700 mcd
InGaN
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