參數(shù)資料
型號(hào)： VI30120S
廠商： Vishay Intertechnology,Inc.
英文描述： High-Voltage Trench MOS Barrier Schottky Rectifier
中文描述： 高電壓海溝MOS肖特基勢(shì)壘整流器
文件頁數(shù)： 1/5頁
文件大?。?/td> 143K
代理商： VI30120S
Vishay General Semiconductor
V30120S & VI30120S
New Product
Document Number 88974
27-Jul-06
www.vishay.com
1
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.402 V at I
F
= 5 A
FEATURES
Trench MOS Schottky Technology
Low forward voltage drop, low power losses
High efficiency operation
Low thermal resistance
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, Oring diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB & TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
VI30120S
1
K
2
3
TO-262AA
CASE
PIN 2
PIN 1
PIN 3
K
PIN 2
PIN 1
PIN 3
TO-220AB
V30120S
1
2
3
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
30 A
120 V
300 A
V
F
at I
F
= 30 A
T
j
max.
0.70 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V30120S
VI30120S
UNIT
Maximum repetitive peak reverse voltage
V
RRM
I
F(AV)
120
V
Maximum average forward rectified current (see Fig. 1)
30
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
300
A
Peak repetitive reverse current per leg at t
p
= 2 μs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
I
RRM
dv/dt
1.0
A
10000
V/μs
T
J
, T
STG
- 20 to + 150
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Breakdown voltage
at I
R
= 1.0 mA T
j
= 25 °C
V
(BR)
120 (minimum)
-
V
Instantaneous forward voltage
(1)
at I
F
= 5 A
I
F
= 15 A
I
F
= 30 A
T
j
= 25 °C
V
F
0.478
0.648
0.854
-
-
0.95
V
at I
F
= 5 A
I
F
= 15 A
I
F
= 30 A
T
j
= 125 °C
0.402
0.582
0.698
-
-
0.75
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
VI30120S-E3/4W 功能描述:肖特基二極管與整流器 30 Amp 120 Volt Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
VI30120SG 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
VI30120SG-E3/4W 功能描述:肖特基二極管與整流器 30 Amp 120 Volt Single TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
VI30120SG-E3-4W 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High-Voltage Trench MOS Barrier Schottky Rectifier
VI30120SGHM3/4W 制造商:Vishay Semiconductors 功能描述:30A,120V,TRENCH SKY RECT.
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