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參數(shù)資料
| 型號(hào)： | VHB40-28S |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.380 INCH, STUD PACKAGE-4 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 17K |
| 代理商： | VHB40-28S |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 200 mA
BV
CES
I
C
= 200 mA
BV
CBO
I
C
= 10 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CE
= 30 V
I
CBO
V
CB
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 500 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
65
65
4.0
5.0
UNITS
V
V
V
V
mA
mA
---
10
1.0
200
C
ob
V
CB
= 30 V
f = 1.0 MHz
65
pF
P
G
η
C
V
CE
= 28 V
P
IN
= 7.0 W f = 175 MHz
7.6
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VHB40-28S
DESCRIPTION:
The
ASI VHB40-28S
is Designed for
FEATURES:
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
5.0 A
V
CBO
65 V
V
CEO
35 V
V
EBO
4.0 V
P
DISS
60 W
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
θ
JC
2.9
O
C/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI10727
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
.100 / 2.54
B
C
D
E
F
G
H
I
A
MAXIMUM
inches / mm
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.090 / 2.29
.155 / 3.94
.100 / 2.54
.175 / 4.45
DIM
.220 / 5.59
.230 / 5.84
.450 / 11.43
J
.750 / 19.05
.980 / 24.89
E
F
D
C
B
.112x45°
G
H
J
I
A
#8-32 UNC-2A
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| VHB50-28S | NPN Silicon RF Power Transistor(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)(NPN 硅型射頻功率晶體管(Ic:6.5 A,Vcbo: 65 V,Vceo: 35 V,Vebo: 4.0 V)) |
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| VHB40-28S_07 | 制造商:ASI 制造商全稱(chēng):ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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