- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361728 > VEMT2000X01 (VISHAY SEMICONDUCTORS) Phototransistor IR Chip Silicon 860nm 2-Pin SMD T/R PDF資料下載
參數(shù)資料
| 型號(hào)： | VEMT2000X01 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | Phototransistor IR Chip Silicon 860nm 2-Pin SMD T/R |
| 中文描述： | Photodetector Transistors NPN Phototransistor |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 134K |
| 代理商： | VEMT2000X01 |
VEMT2000X01, VEMT2020X01
Vishay Semiconductors
www.vishay.com
Rev. 1.3, 23-Aug-11
4
Document Number: 81595
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
REFLOW SOLDER PROFILE
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 2a, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS VEMT2000X01
in millimeters
0
50
100
150
200
250
300
0
50
100
150
200
250
300
Time (s)
T
240 °C
217 °C
245 °C
max. 260 °C
max. 120 s
max. 100 s
max. 30 s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
19841
255 °C
21570
2.2
5.8
± 0.2
2
±
2.3
± 0.2
Collector
0
0
±
0
1.1
± 0.1
Emitter
PIN ID
0
2.2
0
0
1
0.4
1.8
± 0.1
2
±
specifications
Technical drawings
Not indicated to
lerances ±0.1
Drawing-No.: 6.544-5391.01-4
Issue: 1; 26.09.08
Exposed copper
0
6.7
1.7
2.3
± 0.1
Solder pad proposal
acc. IPC 7351
Z 20:1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VEMT2020X01 | PHOTOTRANSISTOR NPN GULLWING |
| VEMT3700-GS08 | Photo Transistor, PHOTO TRANSISTOR DETECTOR, 3.50 X 2.80 MM, 1.75 MM HEIGHT, ROHS COMPLIANT, MINIATURE, PLASTIC, LCC-2 |
| VENUS-L | CDMA/AMPS Dual Band RF Receiver(CDMA/AMPS雙帶寬RF接收器) |
| VENUS-L | CDMA/AMPS Dual Band RF Receiver |
| VENUS-LKG | CDMA/AMPS Dual Band RF Receiver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VEMT2003X01 | 制造商:Vishay Angstrohm 功能描述:NPN PHOTO TRANSISTOR SMD REV. 制造商:Vishay Semiconductors 功能描述:NPN PHOTO TRANSISTOR SMD REV. GULLWING FILTER-E3 - Tape and Reel |
| VEMT2020X01 | 功能描述:光電晶體管 NPN Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| VEMT2023SLX01 | 制造商:Vishay Angstrohm 功能描述:NPN PHOTO TRANSISTOR SMD SIDE 制造商:Vishay Semiconductors 功能描述:NPN PHOTO TRANSISTOR SMD SIDE LOOKER -E3 - Tape and Reel |
| VEMT2023X01 | 制造商:Vishay Angstrohm 功能描述:NPN PHOTO TRANSISTOR SMD GULLW 制造商:Vishay Semiconductors 功能描述:NPN PHOTO TRANSISTOR SMD GULLWING FILTER-E3 - Tape and Reel |
| VEMT2500X01 | 功能描述:光電晶體管 NPN PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。