參數(shù)資料
型號: VCR2N
廠商: InterFET Corporation
英文描述: N-Channel Silicon Voltage Controlled Resistor JFET
中文描述: N溝道硅壓控電阻場效應(yīng)
文件頁數(shù): 3/3頁
文件大?。?/td> 48K
代理商: VCR2N
VCR2N/4N/7N
Vishay Siliconix
Document Number: 70293
S-41225—Rev. F, 28-Jun-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (T
A
= 25 C UNLESS OTHERWISE NOTED)
0
0.2
0.4
0.6
0.8
1
Output Characteristics (VCR7N)
V
DS
Drain-Source Voltage (V)
200
0
160
120
80
40
0.5 V
2.0 V
1.0 V
1.5 V
V
GS(off)
=
2.5 V
V
GS
= 0 V
I
D
APPLICATIONS
A simple application of a FET VCR is shown in Figure 1, the
circuit for a voltage divider attenuator.
V
IN
FIGURE 1.
Simple Attenuator Circuit
V
OUT
R
+
V
GS
VCR
The output voltage is:
R +
r
DS
V
IN
r
DS
V
OUT
=
It is assumed that the output voltage is not so large as to push
the VCR out of the linear resistance region, and that the r
DS
is
not shunted by the load.
The lowest value which V
OUT
can assume is:
R +
r
DS(on)
V
IN
r
DS(on)
V
OUT(min)
=
Since r
DS
can be extremely large, the highest value is:
V
OUT(max)
= V
IN
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