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參數(shù)資料
| 型號(hào)： | VB922 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE IGNITION COIL DRIVER POWER IC |
| 中文描述： | 高壓點(diǎn)火線圈驅(qū)動(dòng)功率集成電路 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | VB922 |
ABSOLUTE MAXIMUM RATING
Symbol
HV
c
I
c
I
in
P
tot
T
stg
T
j
E
s/b
Parameter
Value
Unit
V
A
mA
W
o
C
o
C
mJ
Collector Voltage
Collector Current
Input Current
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Operating Junction Temperature
Avalanche Energy
Internally Limited
Internally Limited
40
150
-40 to 150
-40 to150
350
THERMAL DATA
Symbol
Parameter
Value
Unit
o
C/W
o
C/W
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.83
30
ELECTRICAL CHARACTERISTICS
(V
batt
= 14 V, HEI Coil = xx, T
case
= 25
o
C
unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
cgo
Collector Cut-off
Current
Clamping Voltage
V
in
= 0 HV
c
= 200 V
250
μ
A
V
cl
-40 < T
j
< 125
o
C I
c
= 5 A
I
c
= 5 A V
in
= 4 V
350
400
500
V
V
cg(sat)
Power Stage
Saturation Voltage
Coil Current Limit
2
2.5
V
I
cl
*
50
≤
T
j
≤
150
o
C
-30
≤
T
j
≤
50
o
C
I
f
= 10 A
-30
≤
T
j
≤
120
o
C I
c
= 5 A
I
in
= 10 mA see note 1
-30
≤
T
j
≤
120
o
C I
c
= 5 A
see note 2
I
c
= 3 A L = 6 mH (see fig.1)
6.7
6.4
7.3
7.3
7.9
8.1
A
A
V
f
**
Diode Forward Voltage
3.5
V
V
inCL
Input Voltage During
On State
4
V
V
inTH
Threshold Input
Voltage
0.5
4
V
t
d(off)
Switching Time
15
40
μ
s
* I
CL
is measured 1ms after the maximum peak
** Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
Note 1:
After adjusting input signal (frequency and duty) to be I
C
= 5A, V
in
(Tr ON) should be measured.
Note 2:
The device is biased with 14V on collector with respectto emitter. Then a voltage ramp (0 to 5V) is put on input. V
inTH
is the input
voltage when the device is in on-state with I
C
=5A
VB922
2/5
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