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參數(shù)資料
| 型號(hào)： | VB029SP |
| 廠(chǎng)商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. |
| 中文描述： | 高壓點(diǎn)火線(xiàn)圈驅(qū)動(dòng)功率集成電路 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | VB029SP |
3/10
VB029 / VB029SP / VB029(011Y) / VB029(012Y)
ELECTRICAL CHARACTERISTICS
(V
CC
=13.5V; V
d
=5V; T
j
=25oC; R
coil
=510m
;
L
coil
=7mH unless otherwise
specified)
Note 1: theprimary coil current value I
cl
must be measured 1ms after desaturation of the power stage.
Note 2: timefrom input switching V
NEG
until collector voltage equal to 200V.
(*) V
- V
(**) This thermal flag shift cannot be activated for lower than 125
°
C
.
Symbol
V
cl
Parameter
Test Conditions
Min
320
Typ
360
Max
420
Unit
V
High voltage clamp
Power stage saturation
voltage derating in
temperature
Power-off supply current
Power-on supply current
Driving stage supply
voltage
Collector current limit
High level input voltage
Low level input voltage
High level input current
High level diagnostic
output voltage
Low level diagnostic
output voltage
First threshold level
collector current
First threshold level
collector current drift with
temperature
Second threshold level
collector current
Second threshold level
collector current drift with
temperature
Turn-off delay time of
output current
Turn-off falltime of output
current
Delay time of diagnostic
current
Turn-on rise time of
diagnostic current
Turn-off fall time of
diagnostic current
Thermal flag shift on first
threshold
Single pulse avalanche
energy
-40
°
C
≤
T
j
≤
125
°
C; I
C
=6A
I
C
=7.6A; V
IN
=4V; -40
°
C
≤
T
j
≤
80
°
C
I
C
=7.6A; V
IN
=4V; 80
°
C
≤
T
j
≤
125
°
C
V
cg(sat)td
2.5
2.8
V
V
I
d(off)
I
d(on)
V
IN
=0.4V
V
IN
=4V; I
C
=7.6A; -40
°
C
≤
T
j
≤
125
°
C
10
230
mA
mA
V
d
4.5
5.5
V
I
cl
V
IN
=4V; -40
°
C
≤
T
j
≤
125
°
C; (See note 1)
12
5.5
0.8
200
A
V
V
μ
A
V
INH
V
INL
I
INH
4
0
V
IN
=4V
V
diagH
R
EXT
=22K
(See figure 1)
3.5
(*)
V
d
V
V
diagL
R
EXT
=22K
(See figure 1)
0.5
V
I
C(diag1)
2.15
2.5
2.85
A
I
C(diag1)td
(See figure 3)
I
C(diag2)
6.1
6.5
6.9
A
I
C(diag2)td
(See figure 4)
t
d(off)
I
C
=6A (See note 2)
25
μ
s
t
f(off)
I
C
=6A
8
μ
s
t
d(diag)
R
EXT
=22K
(See figure 1)
1
μ
s
t
r(diag)
R
EXT
=22K
(See figure 1)
1
μ
s
t
f(diag)
R
EXT
=22K
(See figure 1)
1
μ
s
I
th
T
j
>125
°
C (**)
1
A
E
s/b
300
mJ
1
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