參數(shù)資料
型號: V917764B28QAFW-F5
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 64M X 64 DDR DRAM MODULE, 0.45 ns, DMA200
封裝: ROHS COMPLIANT, SODIMM-200
文件頁數(shù): 1/17頁
文件大?。?/td> 114K
代理商: V917764B28QAFW-F5
V916764B24QA Rev 1.3 March 2007
1
V916764B24QA
64M x 64 HIGH PERFORMANCE
UNBUFFERED DDR2 SDRAM SODIMM
Features
200-pin, unbuffered small outline, dual in-line
memory module(SODIMM)
JEDEC standard 1.8V + 0.1V power supply
VDDQ=1.8V + 0.1V
Fast data transfer rate: PC2-3200, PC2-4200, or
PC2-5300
Programmable CAS Latency(CL): 3, 4, 5
Programmable Additive Latency(AL): 0, 1, 2, 3
and 4
Write Latency(WL)=Read Latency(RL)-1
Programmble burst lengths: 4 or 8
Differential data strobe (DQS, DQS#)
(Single ended data strobe option)
On-die termination (ODT)
Adjustable data-output drive strength
64ms, 8192-cycle refresh
Serial Presence Detect (SPD) with EEPROM
Description
The V916764B24QA memory module is orga-
nized as 67,108,864 x 64 bits in a 200 pin memory
module. The 64M x 64 memory module uses 8 Pro-
MOS 32M x 16 DDR2 SDRAMs. The x64 modules
are ideal for use in high performance computer sys-
tems where increased memory density and fast
access times are required.
DDR2-400
PC2-3200 (D3)
DDR2-533
PC2-4200 (E4)
DDR2-667
PC2-5300 (F5)
Units
Bandwith@CL=3
400
Mbps
Bandwith@CL=4
400
533
Mbps
Bandwith@CL=5
400
533
667
Mbps
CL-tRCD-tRP
3-3-3
4-4-4
5-5-5
tCK
Speed Grade
相關(guān)PDF資料
PDF描述
V917564B28QAFW-D3 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA200
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