參數(shù)資料
型號(hào): V62C2161024LL-70T
廠商: Mosel Vitelic, Corp.
英文描述: Ultra Low Power 64K x 16 CMOS SRAM
中文描述: 超低功耗64K的× 16 CMOS SRAM的
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 88K
代理商: V62C2161024LL-70T
V62C2161024L(L)
Absolute Maximum Ratings *
* Note:
Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rat-
ing only and function operation of the device at these or any other conditions outside those indicated in the operational sections of this spec-
ification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect reliability.
Truth Table
Parameter
Symbol
Minimum
Maximum
Unit
Voltage on Any Pin Relative to Gnd
Vt
-0.5
+4.6
V
Power Dissipation
PT
1.0
W
Storage Temperature (Plastic)
Tstg
-55
+150
0
C
Temperature Under Bias
Tbias
-40
+85
0
C
* Key:
X = Don’t Care, L = Low, H = High
Recommended Operating Conditions
(T
A
= 0
0
C to +70
0
C / -40
0
C to 85
0
C**)
CE
H
L
L
L
L
L
L
L
L
OE
X
L
L
L
X
X
X
H
X
WE
X
H
H
H
L
L
L
H
X
BLE
X
L
H
L
L
L
H
X
H
BHE I/O1-I/O8 I/O9-I/O16
X
High-Z
H
Data Out
L
High-Z
L
Data Out
L
Data In
H
Data In
L
High-Z
X
High-Z
H
High-Z
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Mode
High-Z
High-Z
Data Out
Data Out
Data In
High-Z
Data In
High-Z
High-Z
Standby
Low Byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High Byte Write
Output Disable
Output Disable
2
*
V
IL
min = -2.0V for pulse width less than t
RC
/2.
** For Industrial Temperature
Parameter
Symbol
Min
Typ
Max
Unit
V
CC
2.2
2.5
2.7
V
Gnd
0.0
0.0
0.0
V
V
IH
2.0
-
V
CC
+ 0.2
V
V
IL
-0.5*
-
0.6
V
Supply Voltage
Input Voltage
REV. 1.
1
April
2001 V62C
2
16
1024L(L)
相關(guān)PDF資料
PDF描述
V62C2161024LL-85T Ultra Low Power 64K x 16 CMOS SRAM
V62C2161024L Ultra Low Power 64K x 16 CMOS SRAM
V62C2161024L-55T Ultra Low Power 64K x 16 CMOS SRAM
V62C2161024L-70T Ultra Low Power 64K x 16 CMOS SRAM
V62C2161024L-85T Ultra Low Power 64K x 16 CMOS SRAM
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