參數(shù)資料
型號(hào): V62C1802048L-150T
廠商: Mosel Vitelic, Corp.
元件分類: SRAM
英文描述: Ultra Low Power 256K x 8 CMOS SRAM
中文描述: 超低功耗256K × 8 CMOS SRAM的
文件頁數(shù): 3/9頁
文件大小: 84K
代理商: V62C1802048L-150T
AC Test Conditions
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing
Reference Level
0.4V to 1.6V
5ns
50% of input level
(VIL+VIH)/2
Output Load Condition
70ns/85 ns
Load 100ns/150 ns
C
L
= 30pf + 1TTL Load
C
L
= 100pf + 1TTL Load
C
L
*
Figure A. * Including Scope and Jig Capacitance
TTL
V62C1802048L(L)
DC Operating Characteristics
(V
cc
= 1.8 to 2.2V, Gnd = 0V, T
A
= 0
0
C to +70
0
C / -40
0
C to 85
0
C)
Input Leakage Current
I
I
LI
I
V
cc
= Max,
V
in
= Gnd to V
cc
-
1
-
1
-
1
-
1
μ
A
Output Leakage
Current
I
I
LO
I
CE1 = V
IH
or CE2 = V
IL
V
cc
=
Max,
V
OUT
=
Gnd to V
cc
-
1
-
1
-
1
-
1
μ
A
Operating Power
Supply Current
I
CC
CE1 = V
IL
, CE2 = V
IH
V
IN
= V
IH
or
V
IL
,
I
OUT
=
0
mA
-
3
-
3
-
3
-
3
mA
Average Operating
Current
I
CC1
CE1 = V
IL
, CE2 = V
IH
I
OUT
=
0mA,
Mn Cycle, 100% Duty
-
20
-
20
-
15
-
15
mA
I
CC2
CE1 = 0.2V ,
CE2 =V
cc
- 0.2V
I
OUT
=
0mA,
Cycle Time=1
μ
s, 100% Duty
-
3
-
3
-
3
-
3
mA
Standby Power Supply
Current (TTL Level)
I
SB
CE1 = V
IH
or CE2 = V
IL
-
0.3
-
0.3
-
0.3
-
0.3
mA
Standby Power Supply
Current (CMOS Level)
I
SB1
CE1 > V
cc
- 0.2V
or
CE2 < 0.2V, f = 0
V
IN
< 0.2V or
V
IN
> V
cc
- 0.2V
L
-
-
10
2
-
-
10
2
-
-
10
2
-
-
10
2
μ
A
μ
A
Output Low Voltage
V
OL
I
OL
= 2 mA
-
0.4
-
0.4
-
0.4
-
0.4
V
Output High Voltage
V
OH
I
OH
= -1 mA
1.6
-
1.6
-
1.6
-
1.6
-
V
-70
-100
-150
Unit
Parameter
Sym
Min Max Min Max Min Max Min Max
-85
3
Capacitance
(f = 1MHz, T
A
= 25
0
C)
Parameter*
Input Capacitance
*This parameter is guaranteed by device characterization and is not production tested.
Symbol
C
in
C
I/O
Test Condition
V
in
= 0V
V
in
= V
out
= 0V
Max
7
8
Unit
pF
pF
I/O Capacitance
REV. 1.
2
May
2001 V62C
1802048
L(L)
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