參數(shù)資料
型號: V53C806H
廠商: Mosel Vitelic, Corp.
英文描述: High Performance 1M x 8 Bit Fast Page Mode CMOS Dynamic RAM(高性能1Mx8快速頁面模式CMOS動態(tài)RAM)
中文描述: 高性能100萬× 8位快速頁面模式的CMOS動態(tài)RAM(高性能1Mx8快速頁面模式的CMOS動態(tài)內(nèi)存)
文件頁數(shù): 5/18頁
文件大?。?/td> 136K
代理商: V53C806H
5
V53C806H Rev. 1.6 February 1999
MOSEL V ITELIC
V53C806H
AC Characteristics
T
A
= 0
°
C to 70
AC Test conditions, input pulse levels 0 to 3V
°
C, V
CC
= 5 V
±
10%, V
SS
= 0V unless otherwise noted
#
Symbol
Parameter
40
45
50
60
Unit
Notes
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
1
t
RAS
RAS Pulse Width
40
75K
45
75K
50
75K
60
75K
ns
2
t
RC
Read or Write Cycle Time
75
80
90
110
ns
3
t
RP
RAS Precharge Time
25
25
30
40
ns
4
t
CSH
CAS Hold Time
40
45
50
60
ns
5
t
CAS
CAS Pulse Width
12
13
14
15
ns
6
t
RCD
RAS to CAS Delay
17
28
18
32
19
36
20
43
ns
7
t
RCS
Read Command Setup Time
0
0
0
0
ns
4
8
t
ASR
Row Address Setup Time
0
0
0
0
ns
9
t
RAH
Row Address Hold Time
7
8
9
10
ns
10
t
ASC
Column Address Setup Time
0
0
0
0
ns
11
t
CAH
Column Address Hold Time
5
6
7
10
ns
12
t
RSH (R)
RAS Hold Time (Read Cycle)
12
13
14
15
ns
13
t
CRP
CAS to RAS Precharge Time
5
5
5
5
ns
14
t
RCH
Read Command Hold Time
Referenced to CAS
0
0
0
0
ns
5
15
t
RRH
Read Command Hold Time
Referenced to RAS
0
0
0
0
ns
5
16
t
ROH
RAS Hold Time Referenced to OE
8
9
10
10
ns
17
t
OAC
Access Time from OE
12
13
14
17
ns
18
t
CAC
Access Time from CAS
12
13
14
17
ns
6, 7
19
t
RAC
Access Time from RAS
40
45
50
60
ns
6, 8, 9
20
t
CAA
Access Time from Column Address
20
22
24
30
ns
6, 7, 10
21
t
LZ
CAS to Low-Z Output
0
0
0
0
ns
16
22
t
HZ
Output buffer turn-off delay time
0
6
0
7
0
8
0
10
ns
16
23
t
AR
Column Address Hold Time
from RAS
30
35
40
45
ns
24
t
RAD
RAS to Column Address
12
20
13
23
14
26
15
30
ns
11
Delay Time
25
t
RSH (W)
RAS or CAS Hold Time in Write
Cycle
12
13
14
15
ns
26
t
CWL
Write Command to CAS Lead Time
12
13
14
15
ns
27
t
WCS
Write Command Setup Time
0
0
0
0
ns
12, 13
28
t
WCH
Write Command Hold Time
5
6
7
10
ns
29
t
WP
Write Pulse Width
5
6
7
10
ns
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