參數(shù)資料
型號: V53C518165A60
廠商: Mosel Vitelic, Corp.
英文描述: 1M x 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
中文描述: 100萬× 16 EDO公司頁面模式的CMOS動(dòng)態(tài)隨機(jī)存儲器可選自刷新
文件頁數(shù): 1/28頁
文件大小: 193K
代理商: V53C518165A60
MOSEL VITELIC
1
V53C518165A
1M x 16 EDO PAGE MODE
CMOS DYNAMIC RAM
OPTIONAL SELF REFRESH
V53C518165A Rev. 1.1 January 1998
HIGH PERFORMANCE
50
60
Max. RAS Access Time, (t
RAC
)
50 ns
60 ns
Max. Column Address Access Time, (t
CAA
)
25 ns
30 ns
Min. Extended Data Out Page Mode Cycle Time, (t
PC
)
20 ns
25 ns
Min. Read/Write Cycle Time, (t
RC
)
84 ns
104 ns
Features
I
1MB x 16-bit organization
I
EDO Page Mode for a sustained data rate
of 50 MHz
I
RAS access time: 50, 60 ns
I
Dual CAS Inputs
I
Low power dissipation
I
Read-Modify-Write, RAS-Only Refresh,
CAS-Before-RAS Refresh
Refresh Interval: 1024 cycles/16 ms
I
Available in 42-pin 400 mil SOJ and
44/50-pin 400 mil TSOP-II Packages
I
Single 5V
±
10% Power Supply
I
TTL Interface
I
Optional Self Refresh (V53C518165AS)
Refresh Interval: 1024 cycles/128 ms
Description
The V53C518165A is a 1048576 x 16 bit high-
performance CMOS dynamic random access
memory. The V53C518165A offers Page mode op-
eration with Extended Data Output. The
V53C518165A has symmetric address, 10-bit row
and 10-bit column.
All inputs are TTL compatible. EDO Page Mode
operation allows random access up to 1024 x 16
bits, within a page, with cycle times as short as
20ns.
These features make the V53C518165A ideally
suited for a wide variety of high performance com-
puter systems and peripheral applications.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
K
T
50
60
Std.
0
°
C to 70
°
C
Blank
–40
°
C to +85
°
C
I
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