參數(shù)資料
型號: V53C364165A
廠商: Mosel Vitelic, Corp.
英文描述: 3.3 Volt 4M X 16 EDO Page Mode CMOS Dynamic RAM(3.3V 4Mx16 EDO頁面模式CMOS動態(tài)RAM)
中文描述: 3.3伏特4米× 16 EDO公司頁面模式的CMOS動態(tài)RAM(3.3 4Mx16 EDO公司頁面模式的CMOS動態(tài)內存)
文件頁數(shù): 6/26頁
文件大小: 167K
代理商: V53C364165A
6
V53C364165A Rev. 0.2 September 1998
MOSEL V ITELIC
AC Characteristics
(5,6)
V53C364165A
T
A
= 0 to 70
°
C,V
CC
= 3.3 V
±
0.3V , t
T
= 2 ns
#
Symbol
Parameter
-40
- 50
- 60
Unit
Notes
Min.
Max.
Min.
Max.
Min.
Max.
Common Parameters
1
t
RC
Random read or write cycle time
69
84
104
ns
2
t
RAS
RAS pulse width
40
100K
50
100K
60
100K
ns
3
t
CAS
CAS pulse width
6
100K
8
100K
10
100K
ns
4
t
RP
RAS precharge time
25
30
40
ns
5
t
CP
CAS precharge time
6
8
10
ns
6
t
ASR
Row address setup time
0
0
0
ns
7
t
RAH
Row address hold time
5
7
10
ns
8
t
ASC
Column address setup time
0
0
0
ns
9
t
CAH
Column address hold time
5
7
10
ns
10
t
RCD
RAS to CAS delay time
9
30
11
37
14
45
ns
11
t
RAD
RAS to column address delay time
7
20
9
25
12
30
ns
12
t
RSH
RAS hold time
6
8
10
ns
13
t
CSH
CAS hold time
32
40
48
ns
14
t
CRP
CAS to RAS precharge time
5
5
5
ns
15
t
T
Transition time (rise and fall)
1
50
1
50
1
50
ns
7
16
t
REF
Refresh period for 4k-refresh version
128
128
128
ms
17
t
REF
Refresh period for L-versions
256
256
256
ms
Read Cycle
18
t
RAC
Access time from RAS
40
50
60
ns
8, 9
19
t
CAC
Access time from CAS
10
13
15
ns
8, 9
20
t
CAA
Access time from column address
20
25
30
ns
8,10
21
t
OEA
OE access time
10
13
15
ns
22
t
RAL
Column address to RAS lead time
20
25
30
ns
23
t
RCS
Read command setup time
0
0
0
ns
24
t
RCH
Read command hold time
0
0
0
ns
11
25
t
RRH
Read command hold time referenced
to RAS
0
0
0
ns
11
26
t
CLZ
CAS to output in low-Z
0
0
0
ns
8
27
t
OFF
Output buffer turn-off delay
0
10
0
13
0
15
ns
12
28
t
OEZ
Output buffer turn-off delay from OE
0
10
0
13
0
15
ns
12
29
t
DZC
Data to CAS low delay
0
0
0
ns
13
30
t
DZO
Data to OE low delay
0
0
0
ns
13
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