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參數(shù)資料
| 型號： | V436664Z24VG-10PC |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M x 64 3.3 VOLT |
| 中文描述： | 512MB的144引腳無緩沖內(nèi)存的SODIMM，64米× 64 3.3伏 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 313K |
| 代理商： | V436664Z24VG-10PC |
4
V436664Z24V Rev. 1.2 February 2002
MOSEL VITELIC
V436664Z24V
Serial Presence Detect Information
A serial presence detect storage device - E
2
PROM -
is assembled onto the module. Information about the
module configuration, speed, etc. is written into the
SPD-Table for modules:
E
2
PROM device during module production using a se-
rial presence detect protocol (I
2
C synchronous 2-wire
bus)
Byte Num-
ber
Function Described
SPD Entry Value
Hex Value
-75PC
-75
-10PC
0
Number of SPD bytes
128
80
80
80
1
Total bytes in Serial PD
256
08
08
08
2
Memory Type
SDRAM
04
04
04
3
Number of Row Addresses (without BS bits)
13
0D
0D
0D
4
Number of Column Addresses (for x8 SDRAM)
10
0A
0A
0A
5
Number of DIMM Banks
2
02
02
02
6
Module Data Width
64
40
40
40
7
Module Data Width (continued)
0
00
00
00
8
Module Interface Levels
LVTTL
01
01
01
9
SDRAM Cycle Time at CL=3
7.5 ns/10.0 ns
75
75
A0
10
SDRAM Access Time from Clock at CL=3
5.4 ns/10.0ns
54
54
60
11
Dimm Config (Error Det/Corr.)
none
00
00
00
12
Refresh Rate/Type
Self-Refresh, 7.8
μ
s
82
82
82
13
SDRAM width, Primary
x8
08
08
08
14
Error Checking SDRAM Data Width
n/a / x8
00
00
00
15
Minimum Clock Delay from Back to Back Ran-
dom Column Address
t
ccd
= 1 CLK
01
01
01
16
Burst Length Supported
1, 2, 4 & 8
0F
0F
0F
17
Number of SDRAM Banks
4
04
04
04
18
Supported CAS Latencies
CL = 2 / 3
06
06
06
19
CS Latencies
CS Latency = 0
01
01
01
20
WE Latencies
WL = 0
01
01
01
21
SDRAM DIMM Module Attributes
Non Buffered/Non Reg.
00
00
00
22
SDRAM Device Attributes: General
Vcc tol ± 10%
0E
0E
0E
23
Minimum Clock Cycle Time at CAS Latency = 2
7.5 ns/10.0 ns
75
A0
A0
24
Maximum Data Access Time from Clock for CL
= 2
5.4 ns/6.0 ns
54
60
60
25
Minimum Clock Cycle Time at CL = 1
Not Supported
00
00
00
26
Maximum Data Access Time from Clock at CL
= 1
Not Supported
00
00
00
27
Minimum Row Precharge Time
15 ns / 20 ns
0F
14
14
28
Minimum Row Active to Row Active Delay t
RRD
14 ns/15 ns/16 ns
0E
0F
10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V436664Z24VG-75 | 512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M x 64 3.3 VOLT |
| V436664Z24VG-75PC | 512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M x 64 3.3 VOLT |
| V436664Z24V | 512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M x 64 3.3 VOLT |
| V437216C04VDTG-10PC | 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 REGISTER PLL ECC SDRAM MODULE |
| V437216C04VDTG-75 | 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC133 REGISTER PLL ECC SDRAM MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V436664Z24VG-75 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M x 64 3.3 VOLT |
| V436664Z24VG-75PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M x 64 3.3 VOLT |
| V437216C04VDTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 REGISTER PLL ECC SDRAM MODULE |
| V437216C04VDTG-75 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 16M x 72 HIGH PERFORMANCE PC133 REGISTER PLL ECC SDRAM MODULE |
| V437216S04VCTG-10PC | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 UNBUFFERED ECC SDRAM MODULE |
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