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參數(shù)資料
| 型號(hào)： | V436664S24V |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE |
| 中文描述： | 3.3伏6400 × 64高性能無(wú)緩沖內(nèi)存模塊 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 184K |
| 代理商： | V436664S24V |
8
V436664S24V Rev. 1.1 March 2002
MOSEL VITELIC
V436664S24V
AC Characteristics
3,4
T
A
= 0° to 70
°
C; V
SS
= 0V; V
CC
= 3.3V
±
0.3V, t
T
= 1 ns
# Symbol Parameter
Limit Values
Unit
Note
-75PC
-75
-10PC
Min.
Max.
Min.
Max.
Min.
Max.
Clock and Clock Enable
1
t
CK
Clock Cycle Time
CAS Latency = 3
CAS Latency = 2
7.5
7.5
7.5
10
10
10
ns
ns
2
f
CK
System frequency
CAS Latency = 3
CAS Latency = 2
–
–
133
133
–
–
133
100
–
–
100
100
MHz
MHz
3
t
AC
Clock Access Time
CAS Latency = 3
CAS Latency = 2
–
–
5.4
5.4
–
–
5.4
6
–
–
6
6
ns
ns
4,5
4
t
CH
Clock High Pulse Width
2.5
–
2.5
–
3
–
ns
6
5
t
CL
Clock Low Pulse Width
2.5
–
2.5
–
3
–
ns
6
6
t
CS
Input Setup time
1.5
–
1.5
–
2
–
ns
7
7
t
CH
Input Hold Time
0.8
–
0.8
–
1
–
ns
7
8
t
CKSP
CKE Setup Time (Power down mode)
2.5
–
2
–
2
–
ns
8
9
t
CKSR
CKE Setup Time (Self Refresh Exit)
8
–
8
–
8
–
ns
9
10
t
T
Transition time (rise and fall)
0.3
1.2
1
–
1
–
ns
Common Parameters
11
t
RCD
RAS to CAS delay
15
–
20
–
20
–
ns
12
t
RC
Cycle Time
60
–
70
120k
70
120k
ns
13
t
RAS
Active Command Period
42
–
45
–
45
–
ns
14
t
RP
Precharge Time
20
–
20
–
20
–
ns
15
t
RRD
Bank to Bank Delay Time
14
–
15
–
20
–
ns
16
t
CCD
CAS to CAS delay time
(same bank)
1
–
1
–
1
–
CLK
Refresh Cycle
17
t
SREX
Self Refresh Exit Time
10
–
10
–
10
–
ns
9
18
t
REF
Refresh Period (8192 cycles)
64
–
64
–
64
–
ms
8
Read Cycle
19
t
OH
Data Out Hold Time
2.7
–
3
–
3
–
ns
4
20
t
LZ
Data Out to Low Impedance Time
1
–
0
–
0
–
ns
21
t
HZ
Data Out to High Impedance Time
3
7.5
3
7.5
3
8
ns
10
22
t
DQZ
DQM Data Out Disable Latency
2
–
2
–
2
–
CLK
Write Cycle
23
t
DPL
Data input to Precharge (write recovery)
2
–
2
–
1
–
CLK
24
t
DAL
Data In to Active/refresh
5
–
5
–
5
–
CLK
11
25
t
DQW
DQM Write Mask Latency
0
–
0
–
0
–
CLK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V436664S24VXTG-75PC | 3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE |
| V436664S24VXTG-75 | 3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE |
| V436664S24VXTG-10PC | 3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE |
| V436664X24VXSG-10PC | 512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M X 64 3.3VOLT |
| V436664X24VXSG-75 | 512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M X 64 3.3VOLT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V436664S24VXTG-10PC | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE |
| V436664S24VXTG-75 | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE |
| V436664S24VXTG-75PC | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:3.3 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED SDRAM MODULE |
| V436664X24V | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M X 64 3.3VOLT |
| V436664X24VXSG-10PC | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:512MB 144-PIN UNBUFFERED SDRAM SODIMM, 64M X 64 3.3VOLT |
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