8-B
IT
LVDS T
RANSMITTER
FOR
V
IDEO
V385
V385 Datasheet
4
3/30/05
Revision 1.6
Integrated Circuit Systems 525 Race Street, San Jose, CA 95126 tel (408) 297-1201 www.icst.com
Absolute Maximum Ratings
Stresses above the ratings listed below can cause permanent damage to the V385. These ratings, which are
standard values for ICS commercially rated parts, are stress ratings only. Functional operation of the device at
these or any other conditions above those indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods can affect product reliability. Electrical
parameters are guaranteed only over the recommended operating temperature range.
Recommended Operation Conditions
Electrical Characteristics
VDD=3.3 V ±10%,
Ambient temperature 0 to +70
°
C
Item
Rating
Supply Voltage, VDD
All Inputs and Outputs
Electrostatic Discharge (EIAJ, 0
, 200 pF)
Ambient Operating Temperature
Storage Temperature
Junction Temperature
Maximum Soldering Temperature
-0.3 V to +4 V
-0.3 V to VCC+0.3 V
> 500 V
0 to +70
°
C
-65 to +150
°
C
150
°
C
260
°
C
Parameter
Min.
Typ.
Max.
Units
Ambient Operating Temperature
Power Supply Voltage (measured in respect to GND)
0
+70
3.6
°
C
V
3.0
3.3
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Freq.
CMOS/TTL DC Specifications
Input High Voltage
Input Low Voltage
Input Current
Power-down Current
LVDS DC Specifications
Differential Output Voltage
Change in V
OD
Between
Complimentary Output States
Common Mode Voltage
Change in V
CM
Between
Complimentary Output States
Output Short Circuit Current
Output Tri-State Current
V
IH
V
IL
I
IN
I
PD
2.00
GND
VCC
0.80
±10
10
V
V
μ
A
μ
A
GND<VIN<VCC
No switching for input pins
V
OD
V
OD
R
L
= 100 ohms
250
345
450
35
mV
mV
V
CM
V
CM
1.125
1.250
1.375
35
V
mV
I
OS
I
OZ
V
OD
=0V
Power Down#=0V
3.5
±1
5
mA
μ
A
±10