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參數(shù)資料
| 型號(hào)： | V29LC51002 |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY |
| 中文描述： | 2兆位262,144 × 8位5伏的CMOS閃存 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 52K |
| 代理商： | V29LC51002 |
MOSEL V ITELIC
V29LC51002
9
V29LC51002 Rev. 0.5 October 2000
Table 2. Command Codes
NOTES:
1.
2.
3.
4.
5.
6.
7.
RA: Read Address
RD: Read Data
PA: The address of the memory location to be programmed.
PD: The data at the byte address to be programmed.
SA(5): Sector Address
40H: Manufacturing ID
82H: Device ID
Command
Sequence
First Bus
Program Cycle
Second Bus
Program Cycle
Third Bus
Program Cycle
Fourth Bus
Program Cycle
Fifth Bus
Program Cycle
Six Bus
Program Cycle
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Read
XXXXH
F0H
Read
5555H
AAH
2AAAH
55H
5555H
F0H
RA(1)
RD(2)
Autoselect
5555H
AAH
2AAAH
55H
5555H
90H
00H
40H(6)
01H
82H(7)
Byte
Program
5555H
AAH
2AAAH
55H
5555H
A0H
PA
PD(4)
Chip Erase
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
10H
Sector Erase
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
SA(5)
30H
Chip Erase Cycle
The V29LC51002 features a chip-erase
operation. The chip erase operation is initiated by
using a specific six-bus-cycle sequence: two unlock
program cycles, a setup command, two additional
unlock program cycles, and the chip erase
command (see Table 2).
The automatic erase begins on the rising edge of
the last WE or CE pulse in the command sequence
and is completed in 3 sec max.
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