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參數(shù)資料
| 型號(hào)： | V29C51001B |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 1 MEGA Bit 5 Volt CMOS Flash Memory(1M位5V CMOS閃速存儲(chǔ)器) |
| 中文描述： | 1兆的5伏的CMOS快閃記憶體（100萬(wàn)位5V的CMOS閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 4/16頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | V29C51001B |
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MOSEL V ITELIC
V29C51001T/V29C51001B
V29C51001T/V29C51001B Rev. 0.4 February 1999
Absolute Maximum Ratings
(1)
NOTE:
1.
Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
No more than one output maybe shorted at a time and not exceeding one second long.
2.
DC Electrical Characteristics
(over the commercial operating range)
Symbol
Parameter
Commercial
Extended
Unit
V
IN
Input Voltage (input or I/O pins)
-2 to +7
-2 to +7
V
V
IN
Input Voltage (A
9
pin, OE)
-2 to +13
-2 to +13
V
V
CC
Power Supply Voltage
-0.5 to +5.5
-0.5 to +5.5
V
T
STG
Storage Temerpature (Plastic)
-65 to +125
-65 to +150
°
C
T
OPR
Operating Temperature
0 to +70
-40 to + 125
°
C
I
OUT
Short Circuit Current
(2)
200 (Max.)
200 (Max.)
mA
Parameter
Name
Parameter
Test Conditions
Min.
Max.
Unit
V
IL
Input LOW Voltage
V
CC
= V
CC
Min.
—
0.8
V
V
IH
Input HIGH Voltage
V
CC
= V
CC
Max.
2
—
V
I
IL
Input Leakage Current
V
IN
= GND to V
CC
, V
CC
= V
CC
Max.
—
±
1
m
A
I
OL
Output Leakage Current
V
OUT
= GND to V
CC
, V
CC
= V
CC
Max.
—
±
1
m
A
V
OL
Output LOW Voltage
V
CC
= V
CC
Min., I
OL
= 2.1mA
—
0.4
V
V
OH
Output HIGH Voltage
V
CC
= V
CC
Min, I
OH
= -400
m
A
2.4
—
V
I
CC1
Read Current
CE = OE = V
Address input = V
V
CC
= V
CC
IL
, WE = V
IH
, at f = 1/t
, all I/Os open,
IL
/V
IH
RC
Min.,
Max.
—
40
mA
I
CC2
Program Current
CE = WE = VIL, OE = V
IH
, V
CC
= V
CC
Max.
—
50
mA
I
SB
TTL Standby Current
CE = OE = WE = V
IH
, V
CC
= V
CC
Max.
—
2
mA
I
SB1
CMOS Standby Current
CE = OE = WE = V
CC
– 0.3V, V
CC
= V
CC
Max.
—
100
m
A
V
H
Device ID Voltage for A
9
CE = OE = V
IL
, WE = V
IH
11.5
12.5
V
I
H
Device ID Current for A
9
CE = OE = V
IL
, WE = V
IH
, A9 = V
H
Max.
—
50
m
A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| V29C51001B-45J | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY |
| V29C51001B-45P | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY |
| V29C51001B-45T | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY |
| V29C51001B-70J | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY |
| V29C51001B-70P | 制造商:MOSEL 制造商全稱(chēng):MOSEL 功能描述:1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY |
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