參數(shù)資料
型號: V18MLA0805H
英文描述: DIODE SUPPRESS SMD BAUFORM 0805 18V
中文描述: 貼片二極管禁止BAUFORM 0805 18V的
文件頁數(shù): 8/12頁
文件大?。?/td> 87K
代理商: V18MLA0805H
5-10
Energy Absorption/Peak Current Capability
Energy dissipated within the ML is calculated by multiplying
the clamping voltage, transient current and transient
duration. An important advantage of the multilayer is its
interdigitated electrode construction within the mass of
dielectric material. This results in excellent current
distribution and the peak temperature per energy absorbed
is very low. The matrix of semiconducting grains combine to
absorb and distribute transient energy (heat) (Figure 10).
This dramatically reduces peak temperature, thermal
stresses and enhances device reliability.
As a measure of the device capability in energy handling and
peak current, the V26MLA1206A part was tested with
multiple pulses at its peak current rating (150A, 8/20
μ
s). At
the end of the test, 10,000 pulses later, the device voltage
characteristics are still well within specification (Figure 11).
100
10
20
V26MLA1206
40
60
80
100
120
140
TEMPERATURE (
o
C)
C
V5.5MLA1206
0
-20
-40
-60
FIGURE 9. CLAMPING VOLTAGE OVER TEMPERATURE
(V
C
AT 10A)
GRAINS
DEPLETION
REGION
FIRED CERAMIC
DIELECTRIC
METAL
ELECTRODES
DEPLETION
REGION
FIGURE 10. MULTILAYER INTERNAL CONSTRUCTION
METAL END
TERMINATION
METAL END
TERMINATION
100
10
0
V26MLA1206
2000
4000
6000
8000
10000
12000
NUMBER OF PULSES
V
FIGURE 11.
REPETITIVE PULSE CAPABILITY
PEAK CURRENT = 150A
8/20
μ
s DURATION, 30s BETWEEN PULSES
ML Series
相關PDF資料
PDF描述
V18MLA0805LH DIODE SUPPRESS SMD BAUFORM 0805 18V
V18MLA1206H DIODE SUPPRESS SMD BAUFORM 1206 18V
V18MLA1210H DIODE SUPPRESS SMD BAUFORM 1210 18V
V26MLA1206H DIODE SUPPRESS SMD BAUFORM 1206 26V
V26MLA1210H DIODE SUPPRESS SMD BAUFORM 1210 26V
相關代理商/技術參數(shù)
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