參數(shù)資料
型號(hào)： UTV8100B
廠商： Electronic Theatre Controls, Inc.
英文描述： 100 Watts Pk, 28 Volt, Class AB UHF Television - Band IV & V
中文描述： 100瓦峰，28伏，AB類超高頻電視-帶四
文件頁(yè)數(shù)： 1/3頁(yè)
文件大小： 304K
代理商： UTV8100B
Ghz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UTV8100B
100 Watts Pk, 28 Volt, Class AB
UHF Television - Band IV & V
GENERAL DESCRIPTION
The UTV8100B is a COMMON EMITTER transistor capable of providing
100 Watt Peak, Class AB, RF Output Power over the band 470 - 860 MHz.
The transistor includes double input and output prematching for full
broadband capability. Gold Metalization and Diffused Ballasting are used to
provide high reliability and supreme ruggedness.
CASE OUTLINE
55RT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 290 Watts
Maximum Voltage and Current
BVcbo Collector to Emiter Voltage 65 Volts
BVceo Collector to Emitter Voltage 30 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 15 Amps
Maximum Temperatures
Storage Temperature -40 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL
CHARACTERISTICS
TEST
MIN
TYP
MAX
UNITS
CONDITIONS
PldB
Pin
Po - ref
Pg
η
VSWR
* European Test Method, Vision = -8 dB, Sideband = - 16 dB, Sound = - 7 dB
Power Input
Power Output - Linear
Power Gain - Small Sig
Efficiency
Load Mismatch Tolerance
Vcc = 28 Volts
Icq = 300 mA (total)
14.0
Watts
Watts
dB
%
Power Out - 1 dB Compression
F =470 - 860 MHz
100
110
Watts
25
8.5
55
5:1
9.5
58
Pout = 25 Watts Pk
BVceo
BVces
BVebo
Hfe
Cob
R
θ
jc
* Not measureable due to internal prematch network
Issue December 1996
GHz TECHNOLOGY, INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT
THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
Collector to Emitter Breakdown
Emitter to Base Breakdown
Current Gain
Output Capacitance - (each side)*
Thermal Resistance
Ic =25 mA
Ie = 30 mA
Vce = 5 V, Ic = 1 A
Vcb = 28V, F=1MHz
Tc = 25 C
60
3.5
20
Volts
Volts
Collector to Emitter Breakdown
Ic = 25 mA
30
Volts
120
44
pF
C/W
0.6
o
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