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參數(shù)資料
| 型號(hào)： | UTCMPSH10 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 高壓晶體管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 11K |
| 代理商： | UTCMPSH10 |
UTC MPSH10
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MPSH10 is desinged for using as VHF and
UHF oscillators and VHf Mixer in a tuner of a TV
receiver.
TO-92
1
1: EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS
( Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
Collector-base voltage
V
CBO
Collector-emitter voltage
V
CEO
Emitter-base voltage
V
EBO
Total Power Dissipation(Ta=25
°
C
)
Pc
Collector current
Ic
Junction Temperature
T
j
Storage Temperature
T
STG
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C,unless otherwise specified)
PARAMETER
SYMBOL
Collector-base breakdown voltage
BV
CBO
Collector-emitter breakdown voltage
BV
CEO
Emitter-base breakdown voltage
BV
EBO
Collector cut-off current
I
CBO
Emitter cut-off current
I
EBO
Collector-emitter saturation voltage
VCE(SAT)
Collector-emitter on voltage
VCE(ON)
DC current gain
hFE
VCE=10V,IC=4mA,f=100MHZ
Output capacitace
Cob
Current gain bandwidth product
fT
VCE=10V,IC=4mA,f=100MHZ
RATING
30
25
3
250
50
150
-55 ~ +150
UNIT
V
V
V
mW
mA
°
C
°
C
TEST CONDITIONS
Ic=100
μ
A
Ic=1mA
I
E
=10
μ
A
V
CB
=25V
V
EB
=2V
IC=4mA,IB=400
μ
A
VCE=10V,IC=4mA
MIN
30
25
TYP
MAX
UNIT
V
V
V
nA
nA
mV
mV
3
100
100
500
950
60
VCE=10V,f=1MHZ
0.7
pF
MHZ
650
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