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參數(shù)資料
| 型號(hào)： | UTCHE8550 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | PNP EPITAXIAL SILIC ON TRANSISTOR |
| 中文描述： | 進(jìn)步黨對(duì)晶體管外延水磨石英 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | UTCHE8550 |
UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-010,A
LOW VOLTAGE HIGH CURRENT
SMALL SIGNAL PNP TRANSISTOR
DESCRIPTION
The UTC HE8550 is a low voltage high current small
signal PNP transistor, designed for Class B push-pull
2W audio amplifier for portable radio and general purpose
applications.
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC HE8050
TO-92
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation(Ta=25
℃
)
Collector Current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-Base Breakdown Voltage
BV
CBO
Collector-Emitter Breakdown Voltage
BV
CEO
Emitter-Base Breakdown Voltage
BV
EBO
Collector Cut-Off Current
I
CBO
Emitter Cut-Off Current
I
EBO
DC Current Gain(note)
h
FE1
h
FE2
h
FE3
Collector-Emitter Saturation Voltage
V
CE
(sat)
Base-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Voltage
V
BE
Current Gain Bandwidth Product
Output Capacitance
Cob
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
VALUE
-40
-25
-6
1
-1.5
150
-65 ~ +150
UNIT
V
V
V
W
A
°
C
°
C
TEST CONDITIONS
Ic=-100
μ
A,I
E
=0
Ic=-2mA,I
B
=0
I
E
=-100
μ
A,Ic=0
V
CB
=-35V,I
E
=0
V
EB
=-6V,Ic=0
V
CE
=-1V,Ic=-5mA
V
CE
=-1V,Ic=-100mA
V
CE
=-1V,Ic=-800mA
Ic=-800mA,I
B
=-80mA
Ic=-800mA,I
B
=-80mA
V
CE
=-1V,Ic=-10mA
V
CE
=-10V,Ic=-50mA
V
CB
=-10V,I
E
=0
f=1MHz
MIN
-40
-25
-6
45
85
40
100
TYP
170
160
80
-0.28
-0.98
-0.66
190
9.0
MAX
-100
-100
500
UNIT
V
V
V
nA
nA
-0.5
-1.2
-1.0
V
V
V
f
T
MHz
pF
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