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參數(shù)資料
| 型號： | UTCD965SS |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | NPN EPITAXIAL SILICON TRANSISTOR |
| 中文描述： | npn型外延硅晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 75K |
| 代理商： | UTCD965SS |
UTC D965SS / D965ASS
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R206-016,B
DC current gain(note)
h
FE
V
CE
=2V,Ic=1mA
V
CE
=2V,Ic=0.5A
V
CE
=2V,Ic=2A
TEST CONDITIONS
Ic=3A, I
B
= 0.1A
V
CE
=6V,Ic=50mA
V
CB
=20V,I
E
=0
f=1MHz
230
150
MIN
200
TYP
150
800
PARAMETER
SYMBOL
V
CE
(sat)
f
T
Cob
MAX
1
50
UNIT
V
MHz
pF
Collector-emitter saturation voltage
Current gain bandwidth product
Output capacitance
CLASSIFICATION OF hFE2
RANK
RANGE
Q
R
S
230-380
340-600
560-800
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Collector-Emitter voltage ( V)
I
0
0.4
0.8
1.2
1.6
2.0
0
1.0
1.5
2.0
2.5
3.0
I
B
=0.5mA
I
B
=1.0mA
I
B
=1.5mA
I
B
=2.0mA
I
B
=2.5mA
I
B
=3.0mA
Fig.2 DC current Gain
Ic,Collector current (mA)
H
F
,
102
101
100
103
104
103
102
101
101
V
CE
=2V
Fig.3 Base-Emitter on Voltage
101
102
103
104
I
Base-Emitter voltage (V)
0
0.2
0.4
0.6
0.8
1.0
V
CE
=2V
Ic,Collector current (mA)
104
103
102
101
100
S
101
102
103
104
Fig.4 Saturation voltage
Fig.5 Current gain-bandwidth
product
Fig.6 Collector output
Capacitance
V
CE
(sat)
V
BE
(sat)
Ic=10*I
B
Ic,Collector current (mA)
100
101
102
103
C
p
T
(
100
101
102
V
CE
=6V
Collector-Base voltage (V)
C
103
103
100
101
102
10-1
100
101
102
f=1MHz
I
E
=0
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