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參數(shù)資料
| 型號(hào)： | UTCBC337 |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | SWITCHING AND AMPLIFIER APPLICATIONS |
| 中文描述： | 開關(guān)和放大器應(yīng)用 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | UTCBC337 |
UTC BC337/338
NPN EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-039,B
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC327/328
1: COLLECTOR 2: BASE 3: EMITTER
TO-92
1
ABSOLUTE MAXIMUM RATINGS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
Collector-emitter voltage
: BC337
: BC338
Collector-emitter voltage
: BC337
: BC338
Emitter-base voltage
Collector current (DC)
Collector dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-emitter breakdown voltage
: BC337
: BC338
Collector-emitter breakdown voltage
: BC337
: BC338
Emitter-base breakdown voltage
BV
EBO
Collector Cut-off Current
: BC337
: BC338
DC current gain
h
FE1
h
FE2
Collector-emitter saturation voltage
V
CE
(sat)
SYMBOL
V
CES
RATING
50
30
45
25
5
800
625
150
-55 ~ +150
UNIT
V
V
V
V
V
mA
mW
°
C
°
C
V
CEO
V
EBO
Ic
Pc
T
j
T
STG
TEST CONDITIONS
Ic=10mA, I
B
=0
MIN
45
25
50
30
5
TYP
MAX
UNIT
V
V
V
V
V
nA
nA
BV
CEO
BV
CES
Ic=0.1mA, V
BE
=0
I
E
=0.1mA, Ic=0
V
CE
=45V, I
B
=0
V
CE
=25V, I
B
=0
V
CE
=1V, Ic=100mA
V
CE
=1V, Ic=300mA
Ic=500mA, I
B
=50mA
I
CES
2
2
100
100
100
60
0.7
V
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