參數(shù)資料
型號(hào)： UT8Q512K32-SPC
廠商： Aeroflex Inc.
英文描述： 16Megabit SRAM MCM
中文描述： 16Megabit的SRAM億立方米
文件頁(yè)數(shù)： 3/14頁(yè)
文件大小： 135K
代理商： UT8Q512K32-SPC
3
WRITE CYCLE
A combination of Wn less than V
IL
(max) and En less than
V
IL
(max) defines a write cycle. The state of G is a “don’t care”
for a write cycle. The outputs are placed in the high-impedance
state when either G is greater than V
IH
(min), or when Wn is less
than V
IL
(max).
Write Cycle 1, the Write Enable-controlled Access is defined
by a write terminated by Wn going high, with En still active.
The write pulse width is defined by t
WLWH
when the write is
initiated by Wn, and by t
ETWH
when the write is initiated by En.
Unless the outputs have been previously placed in the high-
impedance state by G, the user must wait t
WLQZ
before applying
data to the eight bidirectional pins DQn(7:0) to avoid bus
contention.
Write Cycle 2, the Chip Enable-controlled Access is defined by
a write terminated by the former of En or Wn going inactive.
The write pulse width is defined by t
WLEF
when the write is
initiated by Wn, and by t
ETEF
when the write is initiated by the
En going active. For the Wn initiated write, unless the outputs
have been previously placed in the high-impedance state by G,
the user must wait t
WLQZ
before applying data to the eight
bidirectional pins DQn(7:0) to avoid bus contention.
TYPICAL RADIATION HARDNESS
The UT8Q512K32 SRAM incorporates features which allow
operation in a limited radiation environment.
Table 2. Typical Radiation Hardness
Design Specifications
1
Notes:
1. The SRAM will not latchup during radiation exposure under recommended
operating conditions.
2. 90% worst case particle environment, Geosynchronous orbit, 100 mils of
Aluminum.
Total Dose
50
krad(Si) nominal
Heavy Ion
Error Rate
2
<1E-8
Errors/Bit-Day
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