
UTRON
UT51C164
Rev 1.4
AC CHARACTERISTICS (
continued )
256K X 16 BIT EDO DRAM
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
P90005
7
40
50
60
SYMBOL PARAMETER
Min35
NOTE
30
t
WCR
Write Command Hold Time
from
RAS
Write Command to
RAS
Lead Time
Data in Setup Time
Data in Hold Time
Write to
OE
Hold time
OE
to Data Delay Time
Read-Modify-Write Cycle Time 105
Read-Modify-Write Cycle Time
RAS
Pulse Width
CAS
to
WE
Delay in Read-
Modify-Write Cycle
RAS
to
WE
Delay in Read-
Modify-Write Cycle
CAS
pulse Width in RMW
Column Address to
WE
Delay
Time
EDO Page Mode Read or
Write Cycle Time
Precharge Time
Column Address to
RAS
Setup Time
Access Time from Column
Precharge
Data in Hold Time Referenced
to
RAS
CAS
Setup Time in CBR
Refresh
RAS
to
CAS
Precharge
Time
CAS
Hold Time in CBR
Refresh
EDO Page Mode Cycle Time
in RMW
Output Hold After
CAS
Low
OE
Low to
CAS
High Setup
Time
OE
Hold Time from
WE
in
RMW Cycle
OE
Pulse Width
Refresh Interval (512 Cycles)
25
30
40
50
ns
31
t
RWL
11
12
14
15
ns
32
33
t
DS
t
DH
t
WOH
t
OED
t
RWC
0
5
5
0
6
6
0
7
8
0
10
10
ns
ns
ns
*11
*11
34
*11
35
5
6
8
10
170
ns
ns
*11
36
110
130
37
t
RRW
70
75
85
105
ns
38
t
CWD
28
30
34
40
ns
*9
39
t
RWD
54
58
68
85
ns
*9
40
t
CRW
46
48
52
65
ns
41
t
AWD
35
38
42
58
ns
*9
42
t
PC
14
15
19
27
ns
43
t
CP
4
5
7
10
ns
44
t
CAR
18
20
24
30
ns
45
t
CAP
20
23
27
34
ns
*4
46
t
DHR
25
30
40
50
ns
47
t
CSR
8
10
10
10
ns
48
t
RPC
0
0
0
0
ns
49
t
CHR
8
9
12
15
ns
50
t
PCM
55
60
70
85
ns
51
t
COH
3
3
3
3
ns
52
t
OES
3
4
6
8
ns
53
t
OEH
5
6
8
10
ns
54
t
OEP
t
REF
8
10
14
18
ns
ms
55
8
8
8
8
*14