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參數(shù)資料
| 型號(hào)： | UT28F64T-45UPC |
| 英文描述： | x8 PROM |
| 中文描述： | x8胎膜早破 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 88K |
| 代理商： | UT28F64T-45UPC |
3
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD
= 5.0V
±
10%; -55
°
C < T
C
< +125
°
C)
SYMBOL
PARAMETER
Notes:
* Post-radiation performance guaranteed at 25
°
C per MIL-STD-883 Method 1019 at 1.0E6 rads(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 2.5mA/MHz.
SYMBOL
PARAMETER
LIMITS
UNITS
V
DD
Positive supply voltage
4.5 to 5.5
V
T
C
Case temperature range
-55 to +125
°
C
V
IN
DC input voltage
0 to V
DD
V
CONDITION
MINIMUM
MAXIMUM
UNIT
V
IH
High-level input voltage
(TTL)
2.4
V
V
IL
Low-level input voltage
(TTL)
0.8
V
V
OL1
Low-level output voltage
I
OL
= 4.8mA, V
DD
= 4.5V (TTL)
0.4
V
V
OL2
Low-level output voltage
I
OL
= 200
μ
A, V
DD
= 4.5V (CMOS)
V
SS
+ 0.05
V
V
OH1
High-level output voltage
I
OH
= -400
μ
A, V
DD
= 4.5V (TTL)
I
OH
= -2.0mA
2.4
3.5
V
V
OH2
High-level output voltage
I
OH
= -200
μ
A V
DD
= 4.5V (CMOS)
I
OH
= -100
μ
A
4.45
V
DD
- 0.3
V
C
IN 1
Input capacitance
= 1MHz, V
DD
= 5.0V
15
pF
C
IO 1, 4
Bidirectional I/O capacitance
= 1MHz, V
DD
= 5.0V
V
OUT
= 0V
15
pF
I
IN
Input leakage current
V
IN
= 0V to V
DD
-1
1
μ
A
I
OZ
Three-state output leakage
current
V
O
= 0V to V
DD
V
DD
= 5.5V
OE = 5.5V
-10
10
μ
A
I
OS 2,3
Short-circuit output current
V
DD
= 5.5V, V
O
= V
DD
V
DD
= 5.5V, V
O
= 0V
-90
90
mA
mA
I
DD
(OP)
5
Supply current operating
@28.6MHz (35ns product)
@22.2MHz (45ns product)
TTL input levels (I
OUT
= 0),
V
IL
= 0.2V
V
DD
, PE = 5.5V
100
85
mA
I
DD
(SB)
post-rad
Supply current standby
CMOS input levels ,
V
IL
= V
SS
to 0.25V
CE = V
DD
-025, V
IH
= V
DD
-0.25V
500
μ
A
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