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參數(shù)資料
| 型號(hào)： | UT28F64T-35UPC |
| 英文描述： | x8 PROM |
| 中文描述： | x8胎膜早破 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | UT28F64T-35UPC |
5
RADIATION HARDNESS
The UT28F64 PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
maintaining the circuit density and reliability. For transient
radiation hardness and latchup immunity, UTMC builds all
radiation-hardened products on epitaxial wafers using an
advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail collapse.
RADIATION HARDNESS DESIGN SPECIFICATIONS
1
Note:
1. The PROM will not latchup during radiation exposure under recommended operating conditions.
Figure 2. PROM Read Cycle
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
AVQV
t
AXQX
t
EHQZ
t
GHQZ
A(12:0)
CE
OE
DQ(7:0)
t
GLQX
t
ELQX
Total Dose
5.0E5
rad(Si)
Latchup LET Threshold
>128
MeV-cm
2
/mg
Memory Cell LET Threshold
>128
MeV-cm
2
/mg
Transient Upset LET Threshold
54
MeV-cm
2
/mg
Transient Upset Device Cross Section @ LET=128 MeV-cm
2
/mg
1E-6
cm
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UT28F64T-45PCA | x8 PROM |
| UT28F64T-45PCC | x8 PROM |
| UT28F64T-45PPA | x8 PROM |
| UT28F64T-45PPC | x8 PROM |
| UT28F64T-45UCA | x8 PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UT28F64T-45PCA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 PROM |
| UT28F64T-45PCC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 PROM |
| UT28F64T-45PPA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 PROM |
| UT28F64T-45PPC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 PROM |
| UT28F64T-45UCA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 PROM |
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