參數(shù)資料
型號: UT136FF-6
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 晶閘管
英文描述: 600 V, 4 A, TRIAC, TO-220AB
封裝: PLASTIC, TO-220F, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 140K
代理商: UT136FF-6
UTC UT136FF/FG
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R401-018,B
ISOLATION LINITING VALUE & CHARACTERISTIC(Ths=25°C,unless otherwise specified)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Repetitive paek voltage form all three terminals to
external heatsink (R.H.≦65%,clean and dustfree)
Visol
1500
V
Capacitance from MT2 to external heatsink (f=1MHz)
Cisol
12
pF
THERMAL RESISTANCES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Thermal Resistance, Junction to heatsink
(full or half cycle)
with heatsink compound
without heatsink compound
Rth j-hs
5.5
7.2
K/W
Thermal Resistance, Junction to Ambient (In free air)
Rth j-a
55
K/W
STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)
MAX
PARAMETER
SYMBOL
CONDITIONS
MIN TYP
UT136FF UT136FG
UNIT
Gate trigger current
IGT
VD=12V, IT=0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
5
8
11
30
25
70
50
100
mA
Latching current
IL
VD=12V, IGT=0.1A
T2+ G+
T2+ G-
T2- G-
T2- G+
7
16
5
7
20
30
20
30
45
30
45
mA
Holding current
IH
VD = 12 V, IGT = 0.1 A
5
15
30
mA
On-state voltage
VT
IT=5A
1.4
1.70
V
VD=12V, IT=0.1A
0.7
1.5
V
Gate trigger voltage
VGT
VD=400V, IT=0.1A, Tj=125
°C
0.25
0.4
V
Off-state leakage current
ID
VD=VDRM(max) , Tj=125
°C
0.1
0.5
mA
DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise specified)
MIN
PARAMETER
SYMBOL
CONDITIONS
UT136FF UT136FG
TYP MAX UNIT
Critical rate of rise of
Off-state voltage
dVD /dt
VDM = 67% VDRM(max) , Tj =125°C,
exponential waveform, gate open
circuit
50
200
250
V/s
Critical rate of change of
Commutating voltage
dVcom/dt
VDM=400V, Tj=95°C, IT(RMS)=4A,
dIcom /dt =1.8A/ms, gate open
circuit
10
50
V/s
Gate controlled turn-on
time
tgt
ITM = 6 A, VD= VDRM(max) , IG=0.1A,
dIG/dt=5A/s
2
s
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