參數(shù)資料
型號(hào): UT136F-5
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 晶閘管
英文描述: 500 V, 4 A, TRIAC, TO-252
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 3/5頁
文件大小: 193K
代理商: UT136F-5
UTC UT136F/G
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R401-010,C
TYPICAL CHARACTERISTICS
1ms
100us
10us
1000
T/s
10
100
4
0
IT(RMS)/A
0
10ms
Ptot/W
Tmb(max)/C
ITSM/A
12
6
surge duration /S
8
10
4
0
IT(RMS)/A
0.01
0.1
1
10
100
150
-50
50
0
1.6
0.8
Tj/℃
1.2
1.4
1
0.6
0.4
Fig. 5.Maximum permissible repetitive rms on-state
current lT(RMS),vs surge duration,for sinusoidal
currents,f=50HZ;Tmb≦107℃
VGT(25℃)
VGT(Tj)
2
13
5
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/VGT(25℃),vs junction temperature Tj.
0
50
100
150
α
101
104
107
110
113
116
119
122
125
8
7
6
5
4
3
2
1
α
=180
α
=120
α
=90
α
=60
α
=30
Tmb/C
Fig.4. Maximum permissible rms current
lT(RMS) vs mounting base Temperature Tmb.
ITSM/A
25
Number of cycles at 50Hz
15
0
10
100
1
30
20
10
5
1000
100ms
2
IT
time
ITSM
Tj initial=25
max
α
IT
time
ITSM
Tj initial=25 max
T
dIT/dt limit
T2-G+ quadrant
T
Fig3.Maximum Permissible non-repetitive peak
on-state current ITSM,vs number of cycles,for
sinusoidal currents,f=50HZ.
Fig.2.Maximum Permissible non-repetitive peak
on-state Current ITSM vs pulse width tp, for
sinusoidal currents,tp≦20ms
Fig.1. Maximum on-state dissipation,Ptot vs rms on-state
current, I T (RMS) whereα=conduction angle.
100
150
-50
50
0
5
3
0
4
IT(RMS)/A
107℃
2
1
相關(guān)PDF資料
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UT136F-6 600 V, 4 A, TRIAC, TO-252
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