參數(shù)資料
型號: UT134E-6
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 晶閘管
英文描述: 600 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-126
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 2/5頁
文件大小: 130K
代理商: UT134E-6
UTC UT134E
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R401-007,B
*Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may switch
to the on-state. The rate of rise of current should not exceed 3A/
s.
THERMAL RESISTANCES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Thermal resistance Junction to mounting base
Full cycle
Half cycle
Rth j-mb
3.0
3.7
K/W
Thermal resistance Junction to ambient
(In free air)
Rth j-a
100
K/W
STATIC CHARACTERISTICS (Tj=25°C, unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Gate trigger current
IGT
VD = 12 V; IT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
2.5
4.0
5.0
11
10
25
mA
Latching current
IL
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
3.0
10
2.5
4.0
15
20
15
20
mA
Holding current
IH
VD = 12 V; IGT = 0.1 A
2.2
15
mA
On-state voltage
VT
IT = 5 A
1.4
1.7
V
VD = 12 V; IT = 0.1 A
0.7
1.5
V
Gate trigger voltage
VGT
VD = 400V ; IT = 0.1 A; Tj =125°C
0.25
0.4
V
Off-state leakage current
ID
VD = VDRM(max) ; Tj = 125 °C
0.1
0.5
mA
DYNAMIC CHARACTERISTICS(Tj=25°C, unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Critical rate of rise of Off-state
voltage
dVD /dt
VDM = 67% VDRM(max) ; Tj =125°C;
exponential waveform; gate open
circuit
50
V/s
Gate controlled turn-on time
tgt
ITM = 6 A; VD= VDRM(max) ; IG=0.1A;
dIG/dt=5A/s
2
s
相關(guān)PDF資料
PDF描述
UT134E-8 800 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-126
UT134F-5 500 V, 4 A, TRIAC, TO-126
UT134F-6 600 V, 4 A, TRIAC, TO-126
UT134F-8 800 V, 4 A, TRIAC, TO-126
UT134G-5 500 V, 4 A, TRIAC, TO-126
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