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參數(shù)資料
| 型號(hào)： | USM6J48A |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 6 A, TRIAC |
| 封裝： | LEAD FREE, 13-10J2A, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 618K |
| 代理商： | USM6J48A |
SM6(G,J)48,USM6(G,J)48,SM6(G,J)48A,USM6(G,J)48A
2006-10-30
2
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
(U)SM6G48
(U)SM6G48A
400
Repetitive Peak
OffState Voltage
(U)SM6J48
(U)SM6J48A
VDRM
600
V
R.M.S OnState Current
IT (RMS)
6
A
60 (50Hz)
Peak One Cycle Surge OnState
Current (Non-Repetitive)
ITSM
66 (60Hz)
A
I
2
t Limit Value
I
2
t
18
A
2
s
Critical Rate of Rise of OnState
Current
(Note 1)
di / dt
50
A / s
Peak Gate Power Dissipation
PGM
5
W
Average Gate Power Dissipation
PG (AV)
0.5
W
Peak Forward Gate Voltage
VGM
10
V
Peak Forward Gate Current
IGM
2
A
Junction Temperature
Tj
40~125
°C
Storage Temperature Range
Tstg
40~125
°C
Note 1: VDRM=0.5×Rated
ITM ≤ 9A
tgw ≥ 10s
tgr ≤ 250ns
igp = IGT×2.0
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| USM6G48 | 400 V, 6 A, TRIAC |
| USM6J48 | 600 V, 6 A, TRIAC |
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| USM8J48A | 600 V, 8 A, TRIAC |
| USM8G48 | 400 V, 8 A, TRIAC |
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