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參數(shù)資料
| 型號： | USM3J48 |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 3 A, TRIAC |
| 封裝： | LEAD FREE, 13-10J2A, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 279K |
| 代理商： | USM3J48 |
SM3G48, USM3G48, SM3J48, USM3J48
2006-10-27
2
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
(U)SM3G48
400
Repetitive Peak
Off-State Voltage
(U)SM3J48
VDRM
600
V
R.M.S On-State Current
IT (RMS)
3
A
30 (50Hz)
Peak One Cycle Surge On-State
Current (Non-Repetitive)
ITSM
33 (60Hz)
A
I
2
t Limit Value
I
2
t
4.5
A
2
s
Critical Rate of Rise of On-State
Current
(Note 1)
di / dt
50
A /
s
Peak Gate Power Dissipation
PGM
5
W
Average Gate Power Dissipation
PG (AV)
0.5
W
Peak Forward Gate Voltage
VGM
10
V
Peak Forward Gate Current
IGM
2
A
Junction Temperature
Tj
40~125
°C
Storage Temperature Range
Tstg
40~125
°C
Note 1: VDRM=0.5×Rated
ITM≤4.5A
tgw≥10s
tgr≤250ns
igp=IGT×2.0
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Repetitive Peak Off-State Current
IDRM
VDRM=Rated
―
20
A
I
T2 (
+), Gate (+)
―
1.5
II
T2 (
+), Gate ()
―
1.5
III
T2 (
), Gate ()
―
1.5
Gate Trigger Voltage
IV
VGT
VD=12V
RL=20
T2 (
), Gate (+)
―
V
I
T2 (
+), Gate (+)
―
20
II
T2 (
+), Gate ()
―
20
III
T2 (
), Gate ()
―
20
Gate Trigger Current
IV
IGT
VD=12V
RL=20
T2 (
), Gate (+)
―
mA
Peak On-State Voltage
VTM
ITM=4.5A
―
1.5
V
Gate Non-Trigger Voltage
VGD
VD=Rated, Tc=125°C
0.2
―
V
Holding Current
IH
VD=12V, ITM=1A
―
30
mA
Thermal Resistance
Rth (j-c)
Junction to Case, AC
―
3.6
°C / W
Critical Rate of Rise of Off-State
Voltage
dv / dt
VDRM=Rated, Tj=125°C
Exponential Rise
―
300
―
V /
s
Critical Rate of Rise of Off-State
Voltage at Commutation
(dv / dt) c
VDRM=400V, Tj=125°C
(di /dt) c=
2.0A / ms
10
―
V /
s
相關PDF資料 |
PDF描述 |
|---|---|
| USM6G48A | 400 V, 6 A, TRIAC |
| USM6J48A | 600 V, 6 A, TRIAC |
| USM6G48 | 400 V, 6 A, TRIAC |
| USM6J48 | 600 V, 6 A, TRIAC |
| USM8G48A | 400 V, 8 A, TRIAC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| USM4 | 制造商:Ferraz Shawmut 功能描述: |
| USM6G48 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:AC POWER CONTROL APPLICATIONS |
| USM6G48A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|400V V(DRM)|6A I(T)RMS|TO-263VAR |
| USM6J48 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|600V V(DRM)|6A I(T)RMS|TO-263VAR |
| USM6J48A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRIAC|600V V(DRM)|6A I(T)RMS|TO-263VAR |
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